A comparative study of wet and dry selective etching processes for GaAs/AIGaAs/lnGaAs pseudomorphic MODFETs

Journal of Electronic Materials

Volumn 21, Issue 1, 1992, Pages 9-15

  Tong, M ^a   Ballegeer, D G ^a   Ketterson, A ^a   Roan, E J ^a   Cheng, K Y ^a   Adesida, I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

citric acid; pseudo morphic MODFET; Selective reactive ion etching; selective wet etching

Indexed keywords

HYDROGEN PEROXIDE - APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS - ETCHING; SEMICONDUCTING GALLIUM ARSENIDE - ETCHING; SEMICONDUCTING INDIUM COMPOUNDS - ETCHING; SEMICONDUCTOR DEVICES, FIELD EFFECT - MANUFACTURE;

CITRIC ACID SOLUTIONS; CRYSTAL ORIENTATION; MODFET DEVICES; SILICON TETRACHLORIDE SOLUTION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0026765051     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/BF02670914     Document Type: Article

References (16)

1. Performance of heterostructure FET's in LSI
2. Selective Dry Etching of AlGaAs-GaAs Heterojunction
3. Application of reactive-ion-beam etching to recessed-gate GaAs metal–semiconductor field-effect transistors
4. Selective reactive ion etching of GaAs on AlGaAs using CCl2F2 and He
5. Selective reactive ion etching for short-gate-length GaAs/AlGaAs/InGaAs pseudomorphic modulation-doped field-effect transistors
6. Characterization of GaAs/AlxGa1−xAs selective reactive ion etching in SiCl4/SiF4 plasmas
7. Effects of reactive ion etching on GaAs/AlGaAs heterostmctures
8. Characterization of reactive ion etched AlGaAs/GaAs heterostructures by photoluminescence and low temperature Hall measurements
9. Damage studies of dry etched GaAs recessed gates for field effect transistors
10. Selective Etching Characteristics of Peroxide/Ammonium-Hydroxide Solutions for GaAs∕Al[sub 0.16]Ga[sub 0.84]As
11. Selective etching of GaAs and Al0.30Ga0.70As with citric acid/hydrogen peroxide solutions