InAIAs/InGaAs/InP HEMTs with high breakdown voltages using double-recess gate process

Electronics Letters

Volumn 27, Issue 21, 1991, Pages 1909-1910

  Boos, J B ^a   Kruppa, W ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Semiconductor devices and materials; Transistors

Indexed keywords

SEMICONDUCTING INDIUM COMPOUNDS;

BREAKDOWN VOLTAGES; DOUBLE-RECESS GATES; HEMT; INDIUM PHOSPHIDE;

TRANSISTORS, FIELD EFFECT;

EID: 0026242865     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19911185     Document Type: Article

References (7)

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