Single step lithography for double-recessed gate pseudomorphic high electron mobility transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 1, 1997, Pages 49-52

  Grundbacher, R ^a   Adesida, I ^a   Kao, Y C ^b   Ketterson, A A ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; ETCHING; GATES (TRANSISTOR); POLYMETHYL METHACRYLATES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSCONDUCTANCE;

CITRIC ACID; DOUBLE RECESSED GATE PROCESS; DRAIN SIDE RECESS WIDTHS; GATE LENGTHS; SILICON TETRACHLORIDE; SILICON TETRAFLUORIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 3943084933     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589254     Document Type: Article

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