Recess Dependent Breakdown Behavior of GaAs-HFET‘s

IEEE Electron Device Letters

Volumn 16, Issue 1, 1995, Pages 30-32

  Geiger, D ^a   Dickmann, J ^b   Wolk C ^b   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

^b DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC VARIABLES MEASUREMENT; EQUIVALENT CIRCUITS; FEEDBACK; GATES (TRANSISTOR); SEMICONDUCTING GALLIUM ARSENIDE;

OFF STATE BREAKDOWN; ON STATE BREAKDOWN; THREE TERMINAL MEASUREMENT; TWO TERMINAL MEASUREMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029230295     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.363209     Document Type: Article

References (3)

1. S. R. Bahl and J. A. del Alamo, “A new drain-current injection technique for the measurement of off-state breakdown voltage in FET's.” IEEE Trans. Electron Devices, vol. 40. no. 8. p. 1558, Aug. 1993.
2. P. C. Chao, M. Shur, M. Y. Kao, and B. R. Lee, “Breakdown walkout in AlGaAs/GaAs HEMT's.” IEEE Trans. Electron Devices, vol. 39, no. 3, p. 738, Mar. 1992.
3. E. Kohn, S. Strähle D. Geiger and U. Erben, “High field drift domains in GaAs and InP based heterostructure field effect devices”, Proc.IEEE/Cornell Conf. Advanced Concepts in High Speed Semiconductor Devices and Circuits, p. 411, Aug. 1993.