LOW NOISE 0. 1- mu m GaAs MESFETS BY MBE.

Volumn , Issue , 1987, Pages 177-189

  Mishra, U K ^a   Beaubien, R S ^a   Delaney, M J ^a   Brown, A S ^a   Hackett, L H ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY - APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS; SEMICONDUCTOR DEVICES, FIELD EFFECT - NOISE;

EPITAXIAL PROFILES OPTIMIZATION; GALLIUM ARSENIDE MESFET; LOW NOISE MESFET; T-GATE STRUCTURE;

TRANSISTORS, FIELD EFFECT;

EID: 0023547757     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)