0.15 μm gate-length double recess pseudomorphic HEMT with fmax of 350 GHz

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1988, Pages 172-175

  Lester, L F ^a   Smith, P M ^a   Ho, P ^a   Chao, P C ^a   Tiberio, R C ^a   Duh, K H G ^a   Wolf, E D ^a  

^a Department of Obstetrics Gynecology

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS--MODELING;

GATE-DRAIN FEEDBACK CAPACITANCE; HIGH-ELECTRON-MOBILITY TRANSISTORS; PSEUDOMORPHIC HEMT; ULTRASHORT-GATE-LENGTH HEMT; VOLTAGE GAIN;

TRANSISTORS, FIELD EFFECT;

EID: 0024171703     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)