Influence of Surface Layers on the RF-Performance of AlInAs—GaInAs HFET’s

IEEE Microwave and Guided Wave Letters

Volumn 2, Issue 12, 1992, Pages 472-474

  Dickmann, J ^a   Dambkes H ^a   Nickel, H ^b   Losch R ^b   Schlapp, W ^b   Bottcher J ^c   Kunzel H ^c  

^a DAIMLER AG   (Germany)

^b Forschungsinstitut der DBP Telecom ^*  (Germany)

^c FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE MEASUREMENT; MILLIMETER WAVES; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES;

HFET DEVICES; S-PARAMETERS MEASUREMENT; SURFACE LAYERS EFFECTS;

FIELD EFFECT TRANSISTORS;

EID: 0026985402     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.173398     Document Type: Article

References (10)

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