Four-layer resist process for asymmetric gate recess

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 317-320

  Grundbacher, R ^a   Youtsey, C ^a   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPOLYMERS; ELECTRON BEAM LITHOGRAPHY; ETCHING; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); MASKS; MICROELECTRONIC PROCESSING; POLYMETHYL METHACRYLATES;

ASYMMETRIC GATE RECESS; ETCH MASK; FOUR LAYER RESIST PROCESS; LIFTOFF MASK;

PHOTORESISTS;

EID: 0029732551     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00254-5     Document Type: Article

References (6)

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