Physics and behavior of asymmetrically recessed InP-based MODFET's fabricated with an electron beam resist process

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1994, Pages 331-334

  Ballegeer, Daniel G ^a   Adesida, Ilesanmi ^a   Caneau, Catherine ^a   Bhat, Raj ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

ASYMMETRIC GATE RECESS; ELECTRON BEAM RESIST; GATE TO DRAIN BREAKDOWN VOLTAGE; MODULATION DOPED FIELD EFFECT TRANSISTORS; ORGANOMETALLIC VAPOR PHASE EPITAXY;

FIELD EFFECT TRANSISTORS;

EID: 0028288837     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)