Very high voltage AlGaAs/InGaAs pseudomorphic power HEMTs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 319-321

  Kao, Ming Yih ^a   Fu, Shih Tsang ^a   Ho, Pin ^a   Smith, P M ^a   Chao, P C ^a   Nordheden, K J ^a   Wang, Sujane ^a  

^a GENERAL ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; DRAIN CURRENT; ELECTRIC BREAKDOWN; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; POWER HEMT; SEMICONDUCTING GALLIUM;

GATE-TO-DRAIN BREAKDOWN; HIGH ELECTRON MOBILITY TRANSISTOR (HEMTS); HIGH-VOLTAGE OPERATION; MAXIMUM CURRENT DENSITY; OPERATING VOLTAGE; OUTPUT POWER DENSITY; POWER PERFORMANCE; POWER-ADDED EFFICIENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 85039961765     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307369     Document Type: Conference Paper

References (3)

1. J. C. Huang et al., IEEE MTT-S Digest, 1991, pp. 713.
2. H. Takahashi et al., IEEE IEDM Digest, 1991, pp. 259-262.
3. M. Y. Kao et al., IEEE EDL, Vol. 10, No. 12, Dec. 1989, pp. 580-582.