High field drift domains in GaAs and InP based heterostructure field effect devices

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 1993, Pages 411-420

  Kohn, E ^a   Straehle, S ^a   Geiger, D ^a   Erben, U ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC SPACE CHARGE; FIELD EFFECT TRANSISTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

HETEROSTRUCTURE FIELD EFFECT DEVICES; HIGH FIELD DRIFT DOMAINS;

HETEROJUNCTIONS;

EID: 0027875147     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)