Low-Conductance Drain (LCD) Design of InAlAs/InGaAs/InP HEMT's

IEEE Electron Device Letters

Volumn 13, Issue 10, 1992, Pages 535-537

  Pao, Yi Ching ^a   Harris, James S ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL LATTICES; OPTIMIZATION; SPURIOUS SIGNAL NOISE;

CURRENT GAIN CUTOFF FREQUENCY; LATTICE-MATCHED HEMT; LOW-CONDUCTANCE DRAIN HEMT; PISCES SIMULATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0026941199     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.192824     Document Type: Article

References (7)

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2. K. Y. Chen, A. Y. Cho, S. G. Christman, T. P. Pearsall, and J. E. Rowe, “Measurement of the Γ-L separation in InGaAs by ultraviolet photoemission,” Appl. Phys. Lett., vol. 40, p. 423, 1980.
3. Y. C. Pao et al., “Impact of surface layer on InAlAs/InGaAs/InP high electron mobility transistors,” IEEE Electron Device Lett., vol. 11, no. 7, p. 312, 1990.
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5. J. B. Boos and W. Kuppa, “InAlAs/InGaAs/InP HEMTs with high breakdown voltages using double-recess gate process,” Electron. Lett., vol. 27, no. 21, p. 1909, 1991.
6. M. Riaziat et al., “Highest current gain cutoff frequency with 0.08 μm gate HEMT on InP,” in Proc. 2nd Int. Conf. InP and Related Mater., MC 3, 1990, p. 50.
7. P. Ho et al., “Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs,” Electron. Lett., vol. 27, no. 4, p. 325, 1991.