Study of the effects of a stepped doping profile in short-channel mosfet's

IEEE Transactions on Electron Devices

Volumn 44, Issue 9, 1997, Pages 1425-1431

  Lopez Villanueva J A ^a   Gamiz F ^a   Roldan J B ^a   Ghailan, Yassir ^a   Carceller, J E ^a   Cartujo, Pedro ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; INTERFACES (MATERIALS); MONTE CARLO METHODS; SEMICONDUCTOR DOPING;

CHANNEL LENGTH MODULATION;

MOSFET DEVICES;

EID: 0031232942     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.622597     Document Type: Article

References (23)

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