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Volumn 40, Issue 1, 1993, Pages 157-162

Transconductance and Mobility of Si: B Delta MOSFET’s

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; MASS SPECTROMETERS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON;

DELTA LAYER BROADENING; DELTA-DOPED MOSFETS; PARASITIC SURFACE-CHANNEL FET; SECONDARY ION MASS SPECTROMETRY (SIMS); TRANSCONDUCTANCE MEASUREMENT;

MOSFET DEVICES;

EID: 0027186815 PISSN: 00189383 EISSN: 15579646 Source Type: Journal
DOI: 10.1109/16.249439 Document Type: Article

Times cited : (8)

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