Effects of oxide-charge space correlation on electron mobility in inversion layers

Semiconductor Science and Technology

Volumn 9, Issue 5, 1994, Pages 1102-1107

  Gamiz, F ^a   Melchor, I ^a   Palma, A ^a   Cartujo, P ^a   Lopez Villanueva, J A ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; IMAGE CARRIERS; INVERSION LAYERS; MOBILE CARRIERS; OXIDE CHARGE SPACE CORRELATION;

CHARGE CARRIERS; CORRELATION METHODS; ELECTRIC SPACE CHARGE; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); INTERFACES (MATERIALS); MONTE CARLO METHODS; OXIDES; PHONONS; SEMICONDUCTOR DEVICE MODELS;

MOSFET DEVICES;

EID: 0028424994     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/9/5/015     Document Type: Article

References (19)

1. An analytical expression for phonon-limited electron mobility in silicon-inversion layers
2. Intervalley scattering selection rules for Si and Ge