-
1
-
-
0009599273
-
Characterization of electron mobility in the inverted (100) Si surface
-
Sabnis A G and Clemens J T 1979 Characterization of electron mobility in the inverted (100) Si surface. IEDM Tech. Digest 79 18
-
(1979)
IEDM Tech. Digest
, vol.79
, pp. 18
-
-
Sabnis, A.G.1
Clemens, J.T.2
-
2
-
-
0019048875
-
Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
-
Sun S C and Plummer J D 1980 Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces IEEE Trans. Electron Devices 27 1497
-
(1980)
IEEE Trans. Electron Devices
, vol.27
, pp. 1497
-
-
Sun, S.C.1
Plummer, J.D.2
-
3
-
-
0023090016
-
A semiempirical model of the MOSFET inversion layer mobility for low-temperature operation
-
Arora N D and Gildenblat GS 1987 A semiempirical model of the MOSFET inversion layer mobility for low-temperature operation IEEE Trans. Electron Devices 3489
-
(1987)
IEEE Trans. Electron Devices
, vol.34
, pp. 89
-
-
Arora, N.D.1
Gildenblat, G.S.2
-
4
-
-
0024178927
-
On the universality of inversion-layer mobility in N and P-channel MOSFET's
-
Takagi S, Iwase M and Toriumi A 1988 On the universality of inversion-layer mobility in N and P-channel MOSFET's IEDM Tech. Digest 88 398
-
(1988)
IEDM Tech. Digest
, vol.88
, pp. 398
-
-
Takagi, S.1
Iwase, M.2
Toriumi, A.3
-
5
-
-
0024718364
-
MOSFET electron inversion layer mobilities - A physically based semiempirical model for a wide temperature range
-
Jeon D S and Burk D E 1989 MOSFET electron inversion layer mobilities - a physically based semiempirical model for a wide temperature range IEEE Trans. Electron Devices 36 1456
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 1456
-
-
Jeon, D.S.1
Burk, D.E.2
-
6
-
-
0025430936
-
Measurements and modelling of the N-channel MOSFET inversion layer mobility and devices characteristics in the temperature range 60-300 K
-
Huang C L and Gildenblat G S 1990 Measurements and modelling of the N-channel MOSFET inversion layer mobility and devices characteristics in the temperature range 60-300 K IEEE Trans. Electron Devices 37 1289
-
(1990)
IEEE Trans. Electron Devices
, vol.37
, pp. 1289
-
-
Huang, C.L.1
Gildenblat, G.S.2
-
7
-
-
0027656648
-
Influence of the interface-state density on the electron mobility in silicon inversion layers
-
Banqueri J, Gámiz F, Carceller J E, Cartujo P and López-Villanueva J A 1993 Influence of the interface-state density on the electron mobility in silicon inversion layers J. Electron. Mater. 22 1159
-
(1993)
J. Electron. Mater.
, vol.22
, pp. 1159
-
-
Banqueri, J.1
Gámiz, F.2
Carceller, J.E.3
Cartujo, P.4
López-Villanueva, J.A.5
-
8
-
-
0028424994
-
Effects of the oxide-charge space correlation on electron mobility in inversion layers
-
Gámiz F, Melchor I, Palma A, Cartujo P and López-Villanueva J A 1994 Effects of the oxide-charge space correlation on electron mobility in inversion layers Semicond. Sci. Technol. 9 1102
-
(1994)
Semicond. Sci. Technol.
, vol.9
, pp. 1102
-
-
Gámiz, F.1
Melchor, I.2
Palma, A.3
Cartujo, P.4
López-Villanueva, J.A.5
-
9
-
-
0028747841
-
On the universality of inversion layer mobility on Si MOSFETs: Part I - Effect on substrate impurity concentration
-
Takagi S, Toriumi A, Iwase M and Tango H 1994 On the universality of inversion layer mobility on Si MOSFETs: part I - effect on substrate impurity concentration IEEE Trans. Electon Devices 41 2357
-
(1994)
IEEE Trans. Electon Devices
, vol.41
, pp. 2357
-
-
Takagi, S.1
Toriumi, A.2
Iwase, M.3
Tango, H.4
-
10
-
-
0029250038
-
Universality of electron mobility curves in MOSFETs: A Monte Carlo study
-
Gámiz F, López-Villanueva J A, Banqueri J, Carceller J E and Cartujo P 1995 Universality of electron mobility curves in MOSFETs: a Monte Carlo study IEEE Trans. Electron Devices 42 258
-
(1995)
IEEE Trans. Electron Devices
, vol.42
, pp. 258
-
-
Gámiz, F.1
López-Villanueva, J.A.2
Banqueri, J.3
Carceller, J.E.4
Cartujo, P.5
-
11
-
-
0029306429
-
Oxide charge space correlation in inversion layers II. Three-dimensional oxide charge distribution
-
Gámiz F, López-Villanueva J A, Banqueri J, Ghailan Y and Carceller J E 1995 Oxide charge space correlation in inversion layers II. Three-dimensional oxide charge distribution Semicond. Sci. Technol. 10 592
-
(1995)
Semicond. Sci. Technol.
, vol.10
, pp. 592
-
-
Gámiz, F.1
López-Villanueva, J.A.2
Banqueri, J.3
Ghailan, Y.4
Carceller, J.E.5
-
15
-
-
0019003692
-
Relation of drift velocity to low-field mobility and high-field saturation velocity
-
Thornber K K 1980 Relation of drift velocity to low-field mobility and high-field saturation velocity J. Appl. Phys. 51 2127
-
(1980)
J. Appl. Phys.
, vol.51
, pp. 2127
-
-
Thornber, K.K.1
-
16
-
-
0009509593
-
Carrier mobilities in silicon empirically related to doping and field
-
Caughey D M and Thomas R E 1967 Carrier mobilities in silicon empirically related to doping and field Proc. IEEE 52 2192
-
(1967)
Proc. IEEE
, vol.52
, pp. 2192
-
-
Caughey, D.M.1
Thomas, R.E.2
-
18
-
-
0019045250
-
A two-dimensional computer analysis of triode-like characteristics of short-channel MOSFETs
-
Dang L M and Konaka M 1980 A two-dimensional computer analysis of triode-like characteristics of short-channel MOSFETs IEEE Trans. Electron Devices 27 1533
-
(1980)
IEEE Trans. Electron Devices
, vol.27
, pp. 1533
-
-
Dang, L.M.1
Konaka, M.2
-
19
-
-
0018306669
-
Computer analysis of punch-through in MOSFETs
-
Kotani N and Kawazu S 1979 Computer analysis of punch-through in MOSFETs Solid-State Electron. 22 63
-
(1979)
Solid-State Electron.
, vol.22
, pp. 63
-
-
Kotani, N.1
Kawazu, S.2
-
20
-
-
0016576617
-
Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature
-
Canali C, Majni G, Minder R and Ottaviani G 1975 Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature IEEE Trans. Electron Devices 22 1045
-
(1975)
IEEE Trans. Electron Devices
, vol.22
, pp. 1045
-
-
Canali, C.1
Majni, G.2
Minder, R.3
Ottaviani, G.4
-
21
-
-
0023831987
-
High-field drift velocity of electrons in silicon inversion layers
-
Modelli A and Manzini S 1988 High-field drift velocity of electrons in silicon inversion layers Solid-State Electron. 31 99
-
(1988)
Solid-State Electron.
, vol.31
, pp. 99
-
-
Modelli, A.1
Manzini, S.2
-
23
-
-
0024070809
-
Monte Carlo simulation of submicrometer Si N-MOSFET's at 77 and 300 K
-
Laux S E and Fischetti MV 1988 Monte Carlo simulation of submicrometer Si N-MOSFET's at 77 and 300 K IEEE Electron Device Lett. 9 467
-
(1988)
IEEE Electron Device Lett.
, vol.9
, pp. 467
-
-
Laux, S.E.1
Fischetti, M.V.2
-
24
-
-
35949009958
-
Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
-
Fischetti M V and Laux S E 1988 Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects Phys: Rev. B 38 9721
-
(1988)
Phys: Rev. B
, vol.38
, pp. 9721
-
-
Fischetti, M.V.1
Laux, S.E.2
-
25
-
-
0022044296
-
An investigation of steady-state velocity overshoot in silicon
-
Baccarani G and Wordeman M R 1985 An investigation of steady-state velocity overshoot in silicon Solid-State Electron. 28 407
-
(1985)
Solid-State Electron.
, vol.28
, pp. 407
-
-
Baccarani, G.1
Wordeman, M.R.2
-
26
-
-
0001553399
-
Understanding hot-electron transport in silicon devices: Is there a shortcut?
-
Fischetti M V, Laux S E and Crabbe E 1995 Understanding hot-electron transport in silicon devices: is there a shortcut? J. Appl. Phys. 78 1058
-
(1995)
J. Appl. Phys.
, vol.78
, pp. 1058
-
-
Fischetti, M.V.1
Laux, S.E.2
Crabbe, E.3
-
27
-
-
0015346006
-
Electron dynamics in short channels field-effect transistors
-
Ruch J G 1972 Electron dynamics in short channels field-effect transistors IEEE Trans. Electron Devices 19 652
-
(1972)
IEEE Trans. Electron Devices
, vol.19
, pp. 652
-
-
Ruch, J.G.1
-
28
-
-
0026817615
-
A semi-empirical model of surface-scattering for Monte Carlo simulation of silicon N-MOSFET's
-
Sangiorgi E and Pinto M R 1992 A semi-empirical model of surface-scattering for Monte Carlo simulation of silicon N-MOSFET's IEEE Trans. Electron Devices 39 356
-
(1992)
IEEE Trans. Electron Devices
, vol.39
, pp. 356
-
-
Sangiorgi, E.1
Pinto, M.R.2
-
29
-
-
0022184756
-
Observation of electron velocity overshoot in sub-100-nm-channel MOSFET's in silicon
-
Chou S Y, Antoniadis D A and Smith H I 1985 Observation of electron velocity overshoot in sub-100-nm-channel MOSFET's in silicon IEEE Electron Device Lett. 6 665
-
(1985)
IEEE Electron Device Lett.
, vol.6
, pp. 665
-
-
Chou, S.Y.1
Antoniadis, D.A.2
Smith, H.I.3
-
30
-
-
0023961304
-
Electron velocity overshoot at room and liquid-nitrogen temperatures in silicon inversion layers
-
Shahidi G G, Antoniadis D A and Smith H I 1988 Electron velocity overshoot at room and liquid-nitrogen temperatures in silicon inversion layers IEEE Electron Device Lett. 9 94
-
(1988)
IEEE Electron Device Lett.
, vol.9
, pp. 94
-
-
Shahidi, G.G.1
Antoniadis, D.A.2
Smith, H.I.3
-
32
-
-
0028513865
-
A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon
-
Abramo A et al 1994 A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon IEEE Trans. Electron Devices 41 1646
-
(1994)
IEEE Trans. Electron Devices
, vol.41
, pp. 1646
-
-
Abramo, A.1
-
33
-
-
4243227379
-
Monte Carlo study of electron transport in silicon inversion layers
-
Fischetti M V and Laux S E 1993 Monte Carlo study of electron transport in silicon inversion layers Phys. Rev. B 48 2244
-
(1993)
Phys. Rev. B
, vol.48
, pp. 2244
-
-
Fischetti, M.V.1
Laux, S.E.2
-
34
-
-
0001288137
-
Modified Schrödinger equation including nonparabolicity for the study of a two-dimensional electron gas
-
López-Villanueva J A, Melchor I, Cartujo P and Carceller J E 1993 Modified Schrödinger equation including nonparabolicity for the study of a two-dimensional electron gas Phys. Rev. B 48 1626
-
(1993)
Phys. Rev. B
, vol.48
, pp. 1626
-
-
López-Villanueva, J.A.1
Melchor, I.2
Cartujo, P.3
Carceller, J.E.4
-
35
-
-
5244383350
-
Nonparabolicity effects in resonant tunneling structures
-
Cury L A and Portal JC 1991 Nonparabolicity effects in resonant tunneling structures Phys. Rev. B 44 6224
-
(1991)
Phys. Rev. B
, vol.44
, pp. 6224
-
-
Cury, L.A.1
Portal, J.C.2
-
36
-
-
4243117167
-
Density of states of a two-dimensional electron gas including non-parabolicity
-
López-Villanueva J A, Gámiz F, Melchor I, Cartujo P and Jimenez-Tejada J A 1994 Density of states of a two-dimensional electron gas including non-parabolicity J. Appl. Phys. 75 4267
-
(1994)
J. Appl. Phys.
, vol.75
, pp. 4267
-
-
López-Villanueva, J.A.1
Gámiz, F.2
Melchor, I.3
Cartujo, P.4
Jimenez-Tejada, J.A.5
-
38
-
-
0030173328
-
A procedure for the determination of the effective mobility in a NMOSFET in the moderate inversion region
-
Banqueri J, López-Villanuela J A, Gámiz F, Carceller J E, Lora-Tamayo E and Lozano M 1996 A procedure for the determination of the effective mobility in a NMOSFET in the moderate inversion region Solid State Electron. 39 875-83
-
(1996)
Solid State Electron.
, vol.39
, pp. 875-883
-
-
Banqueri, J.1
López-Villanuela, J.A.2
Gámiz, F.3
Carceller, J.E.4
Lora-Tamayo, E.5
Lozano, M.6
-
40
-
-
35949025517
-
The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials
-
Jacoboni C and Reggiani L 1983 The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials Rev. Mod. Phys. 55 645
-
(1983)
Rev. Mod. Phys.
, vol.55
, pp. 645
-
-
Jacoboni, C.1
Reggiani, L.2
-
41
-
-
0026117393
-
Performance and reliability design issues for deep-submicrometer MOSFET's
-
Chung J E, Jeng M, Moon J E, Ko P K and Hu C 1991 Performance and reliability design issues for deep-submicrometer MOSFET's IEEE Trans. Electron Devices 38 545-54
-
(1991)
IEEE Trans. Electron Devices
, vol.38
, pp. 545-554
-
-
Chung, J.E.1
Jeng, M.2
Moon, J.E.3
Ko, P.K.4
Hu, C.5
-
42
-
-
0017553555
-
The physics of excess electron velocity in submicron-channel FET's
-
Haung R S and Ladbrooke P H 1977 The physics of excess electron velocity in submicron-channel FET's J. Appl. Phys. 21 4791
-
(1977)
J. Appl. Phys.
, vol.21
, pp. 4791
-
-
Haung, R.S.1
Ladbrooke, P.H.2
-
43
-
-
3342990951
-
A new technic for including overshoot phenomena in conventional drift-diffusion simulators
-
ed K Hess, J P Leburton and U Ravaioli (Boston, MA: Kluwer)
-
Blakey P A, Wang X L, Maziar C M and Sandborn P A 1991 A new technic for including overshoot phenomena in conventional drift-diffusion simulators Computational Electronics: Semiconductor Transport and Device Simulations ed K Hess, J P Leburton and U Ravaioli (Boston, MA: Kluwer) pp 51-4
-
(1991)
Computational Electronics: Semiconductor Transport and Device Simulations
, pp. 51-54
-
-
Blakey, P.A.1
Wang, X.L.2
Maziar, C.M.3
Sandborn, P.A.4
-
44
-
-
0026837278
-
An analytic theory of the impact of velocity overshoot on the drain characteristics of field-effect transistors
-
Blakey P A and Joardar K 1992 An analytic theory of the impact of velocity overshoot on the drain characteristics of field-effect transistors IEEE Trans. Electron. Devices 39 740
-
(1992)
IEEE Trans. Electron. Devices
, vol.39
, pp. 740
-
-
Blakey, P.A.1
Joardar, K.2
-
45
-
-
0020103264
-
Current equations for velocity overshoot
-
Thornber K K 1982 Current equations for velocity overshoot IEEE Electron Device Lett. 3 69
-
(1982)
IEEE Electron Device Lett.
, vol.3
, pp. 69
-
-
Thornber, K.K.1
|