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Volumn 12, Issue 3, 1997, Pages 321-330

The dependence of the electron mobility on the longitudinal electric field in MOSFETs

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EID: 0000974699     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/3/014     Document Type: Article
Times cited : (36)

References (46)
  • 1
    • 0009599273 scopus 로고
    • Characterization of electron mobility in the inverted (100) Si surface
    • Sabnis A G and Clemens J T 1979 Characterization of electron mobility in the inverted (100) Si surface. IEDM Tech. Digest 79 18
    • (1979) IEDM Tech. Digest , vol.79 , pp. 18
    • Sabnis, A.G.1    Clemens, J.T.2
  • 2
    • 0019048875 scopus 로고
    • Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
    • Sun S C and Plummer J D 1980 Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces IEEE Trans. Electron Devices 27 1497
    • (1980) IEEE Trans. Electron Devices , vol.27 , pp. 1497
    • Sun, S.C.1    Plummer, J.D.2
  • 3
    • 0023090016 scopus 로고
    • A semiempirical model of the MOSFET inversion layer mobility for low-temperature operation
    • Arora N D and Gildenblat GS 1987 A semiempirical model of the MOSFET inversion layer mobility for low-temperature operation IEEE Trans. Electron Devices 3489
    • (1987) IEEE Trans. Electron Devices , vol.34 , pp. 89
    • Arora, N.D.1    Gildenblat, G.S.2
  • 4
    • 0024178927 scopus 로고
    • On the universality of inversion-layer mobility in N and P-channel MOSFET's
    • Takagi S, Iwase M and Toriumi A 1988 On the universality of inversion-layer mobility in N and P-channel MOSFET's IEDM Tech. Digest 88 398
    • (1988) IEDM Tech. Digest , vol.88 , pp. 398
    • Takagi, S.1    Iwase, M.2    Toriumi, A.3
  • 5
    • 0024718364 scopus 로고
    • MOSFET electron inversion layer mobilities - A physically based semiempirical model for a wide temperature range
    • Jeon D S and Burk D E 1989 MOSFET electron inversion layer mobilities - a physically based semiempirical model for a wide temperature range IEEE Trans. Electron Devices 36 1456
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 1456
    • Jeon, D.S.1    Burk, D.E.2
  • 6
    • 0025430936 scopus 로고
    • Measurements and modelling of the N-channel MOSFET inversion layer mobility and devices characteristics in the temperature range 60-300 K
    • Huang C L and Gildenblat G S 1990 Measurements and modelling of the N-channel MOSFET inversion layer mobility and devices characteristics in the temperature range 60-300 K IEEE Trans. Electron Devices 37 1289
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 1289
    • Huang, C.L.1    Gildenblat, G.S.2
  • 9
    • 0028747841 scopus 로고
    • On the universality of inversion layer mobility on Si MOSFETs: Part I - Effect on substrate impurity concentration
    • Takagi S, Toriumi A, Iwase M and Tango H 1994 On the universality of inversion layer mobility on Si MOSFETs: part I - effect on substrate impurity concentration IEEE Trans. Electon Devices 41 2357
    • (1994) IEEE Trans. Electon Devices , vol.41 , pp. 2357
    • Takagi, S.1    Toriumi, A.2    Iwase, M.3    Tango, H.4
  • 15
    • 0019003692 scopus 로고
    • Relation of drift velocity to low-field mobility and high-field saturation velocity
    • Thornber K K 1980 Relation of drift velocity to low-field mobility and high-field saturation velocity J. Appl. Phys. 51 2127
    • (1980) J. Appl. Phys. , vol.51 , pp. 2127
    • Thornber, K.K.1
  • 16
    • 0009509593 scopus 로고
    • Carrier mobilities in silicon empirically related to doping and field
    • Caughey D M and Thomas R E 1967 Carrier mobilities in silicon empirically related to doping and field Proc. IEEE 52 2192
    • (1967) Proc. IEEE , vol.52 , pp. 2192
    • Caughey, D.M.1    Thomas, R.E.2
  • 18
    • 0019045250 scopus 로고
    • A two-dimensional computer analysis of triode-like characteristics of short-channel MOSFETs
    • Dang L M and Konaka M 1980 A two-dimensional computer analysis of triode-like characteristics of short-channel MOSFETs IEEE Trans. Electron Devices 27 1533
    • (1980) IEEE Trans. Electron Devices , vol.27 , pp. 1533
    • Dang, L.M.1    Konaka, M.2
  • 19
    • 0018306669 scopus 로고
    • Computer analysis of punch-through in MOSFETs
    • Kotani N and Kawazu S 1979 Computer analysis of punch-through in MOSFETs Solid-State Electron. 22 63
    • (1979) Solid-State Electron. , vol.22 , pp. 63
    • Kotani, N.1    Kawazu, S.2
  • 20
    • 0016576617 scopus 로고
    • Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature
    • Canali C, Majni G, Minder R and Ottaviani G 1975 Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature IEEE Trans. Electron Devices 22 1045
    • (1975) IEEE Trans. Electron Devices , vol.22 , pp. 1045
    • Canali, C.1    Majni, G.2    Minder, R.3    Ottaviani, G.4
  • 21
    • 0023831987 scopus 로고
    • High-field drift velocity of electrons in silicon inversion layers
    • Modelli A and Manzini S 1988 High-field drift velocity of electrons in silicon inversion layers Solid-State Electron. 31 99
    • (1988) Solid-State Electron. , vol.31 , pp. 99
    • Modelli, A.1    Manzini, S.2
  • 23
    • 0024070809 scopus 로고
    • Monte Carlo simulation of submicrometer Si N-MOSFET's at 77 and 300 K
    • Laux S E and Fischetti MV 1988 Monte Carlo simulation of submicrometer Si N-MOSFET's at 77 and 300 K IEEE Electron Device Lett. 9 467
    • (1988) IEEE Electron Device Lett. , vol.9 , pp. 467
    • Laux, S.E.1    Fischetti, M.V.2
  • 24
    • 35949009958 scopus 로고
    • Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
    • Fischetti M V and Laux S E 1988 Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects Phys: Rev. B 38 9721
    • (1988) Phys: Rev. B , vol.38 , pp. 9721
    • Fischetti, M.V.1    Laux, S.E.2
  • 25
    • 0022044296 scopus 로고
    • An investigation of steady-state velocity overshoot in silicon
    • Baccarani G and Wordeman M R 1985 An investigation of steady-state velocity overshoot in silicon Solid-State Electron. 28 407
    • (1985) Solid-State Electron. , vol.28 , pp. 407
    • Baccarani, G.1    Wordeman, M.R.2
  • 26
    • 0001553399 scopus 로고
    • Understanding hot-electron transport in silicon devices: Is there a shortcut?
    • Fischetti M V, Laux S E and Crabbe E 1995 Understanding hot-electron transport in silicon devices: is there a shortcut? J. Appl. Phys. 78 1058
    • (1995) J. Appl. Phys. , vol.78 , pp. 1058
    • Fischetti, M.V.1    Laux, S.E.2    Crabbe, E.3
  • 27
    • 0015346006 scopus 로고
    • Electron dynamics in short channels field-effect transistors
    • Ruch J G 1972 Electron dynamics in short channels field-effect transistors IEEE Trans. Electron Devices 19 652
    • (1972) IEEE Trans. Electron Devices , vol.19 , pp. 652
    • Ruch, J.G.1
  • 28
    • 0026817615 scopus 로고
    • A semi-empirical model of surface-scattering for Monte Carlo simulation of silicon N-MOSFET's
    • Sangiorgi E and Pinto M R 1992 A semi-empirical model of surface-scattering for Monte Carlo simulation of silicon N-MOSFET's IEEE Trans. Electron Devices 39 356
    • (1992) IEEE Trans. Electron Devices , vol.39 , pp. 356
    • Sangiorgi, E.1    Pinto, M.R.2
  • 29
    • 0022184756 scopus 로고
    • Observation of electron velocity overshoot in sub-100-nm-channel MOSFET's in silicon
    • Chou S Y, Antoniadis D A and Smith H I 1985 Observation of electron velocity overshoot in sub-100-nm-channel MOSFET's in silicon IEEE Electron Device Lett. 6 665
    • (1985) IEEE Electron Device Lett. , vol.6 , pp. 665
    • Chou, S.Y.1    Antoniadis, D.A.2    Smith, H.I.3
  • 30
    • 0023961304 scopus 로고
    • Electron velocity overshoot at room and liquid-nitrogen temperatures in silicon inversion layers
    • Shahidi G G, Antoniadis D A and Smith H I 1988 Electron velocity overshoot at room and liquid-nitrogen temperatures in silicon inversion layers IEEE Electron Device Lett. 9 94
    • (1988) IEEE Electron Device Lett. , vol.9 , pp. 94
    • Shahidi, G.G.1    Antoniadis, D.A.2    Smith, H.I.3
  • 31
    • 0027678066 scopus 로고
    • Observation of velocity overshoot in silicon inversion layers
    • Assaderaghi F, Ko P D and Hu C 1993 Observation of velocity overshoot in silicon inversion layers IEEE Electron Device. Lett. 14 484
    • (1993) IEEE Electron Device. Lett. , vol.14 , pp. 484
    • Assaderaghi, F.1    Ko, P.D.2    Hu, C.3
  • 32
    • 0028513865 scopus 로고
    • A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon
    • Abramo A et al 1994 A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon IEEE Trans. Electron Devices 41 1646
    • (1994) IEEE Trans. Electron Devices , vol.41 , pp. 1646
    • Abramo, A.1
  • 33
    • 4243227379 scopus 로고
    • Monte Carlo study of electron transport in silicon inversion layers
    • Fischetti M V and Laux S E 1993 Monte Carlo study of electron transport in silicon inversion layers Phys. Rev. B 48 2244
    • (1993) Phys. Rev. B , vol.48 , pp. 2244
    • Fischetti, M.V.1    Laux, S.E.2
  • 34
    • 0001288137 scopus 로고
    • Modified Schrödinger equation including nonparabolicity for the study of a two-dimensional electron gas
    • López-Villanueva J A, Melchor I, Cartujo P and Carceller J E 1993 Modified Schrödinger equation including nonparabolicity for the study of a two-dimensional electron gas Phys. Rev. B 48 1626
    • (1993) Phys. Rev. B , vol.48 , pp. 1626
    • López-Villanueva, J.A.1    Melchor, I.2    Cartujo, P.3    Carceller, J.E.4
  • 35
    • 5244383350 scopus 로고
    • Nonparabolicity effects in resonant tunneling structures
    • Cury L A and Portal JC 1991 Nonparabolicity effects in resonant tunneling structures Phys. Rev. B 44 6224
    • (1991) Phys. Rev. B , vol.44 , pp. 6224
    • Cury, L.A.1    Portal, J.C.2
  • 40
    • 35949025517 scopus 로고
    • The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials
    • Jacoboni C and Reggiani L 1983 The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials Rev. Mod. Phys. 55 645
    • (1983) Rev. Mod. Phys. , vol.55 , pp. 645
    • Jacoboni, C.1    Reggiani, L.2
  • 42
    • 0017553555 scopus 로고
    • The physics of excess electron velocity in submicron-channel FET's
    • Haung R S and Ladbrooke P H 1977 The physics of excess electron velocity in submicron-channel FET's J. Appl. Phys. 21 4791
    • (1977) J. Appl. Phys. , vol.21 , pp. 4791
    • Haung, R.S.1    Ladbrooke, P.H.2
  • 44
    • 0026837278 scopus 로고
    • An analytic theory of the impact of velocity overshoot on the drain characteristics of field-effect transistors
    • Blakey P A and Joardar K 1992 An analytic theory of the impact of velocity overshoot on the drain characteristics of field-effect transistors IEEE Trans. Electron. Devices 39 740
    • (1992) IEEE Trans. Electron. Devices , vol.39 , pp. 740
    • Blakey, P.A.1    Joardar, K.2
  • 45
    • 0020103264 scopus 로고
    • Current equations for velocity overshoot
    • Thornber K K 1982 Current equations for velocity overshoot IEEE Electron Device Lett. 3 69
    • (1982) IEEE Electron Device Lett. , vol.3 , pp. 69
    • Thornber, K.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.