A procedure for the determination of the effective mobility in an N-MOSFET in the moderate inversion region

Solid-State Electronics

Volumn 39, Issue 6, 1996, Pages 875-883

  Banqueri, J ^a   Lopez Villanueva J A ^a   Gamiz F ^a   Carceller, J E ^a   Lora Tamayo, E ^b   Lozano, M ^b  

^a UNIVERSITY OF GRANADA   (Spain)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ELECTRIC VARIABLES MEASUREMENT; ELECTRON SCATTERING; ELECTRONS; GATES (TRANSISTOR); GEOMETRY; MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS;

CLASSICAL CHARGE SHEET MODEL; COULOMB SCATTERING; CURRENT VOLTAGE CURVES; ELECTRON MOBILITY; INVERSION LAYER DEPTH; MODERATE INVERSION REGION; QUANTUM MECHANICAL MODEL; SERIES RESISTANCE EFFECTS; ZERO CHARGE CENTRES;

ELECTRON TRANSPORT PROPERTIES;

EID: 0030173328     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00246-4     Document Type: Article

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