Performance and Reliability Design Issues for Deep-Submicrometer MOSFET's

IEEE Transactions on Electron Devices

Volumn 38, Issue 3, 1991, Pages 545-554

  Chung, James E ^a   Jeng, Min Chie ^b   Moon, James E ^c   Ko, Ping Keung ^d   Hu, Chenming ^d  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b CADENCE DESIGN SYSTEMS   (United States)

^c EASTMAN KODAK COMPANY   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OSCILLATORS; SEMICONDUCTOR MATERIALS--HOT CARRIERS;

CURRENT DRIVING CAPABILITY; DEEP-SUBMICROMETER MOSFET'S; HOT ELECTRON DEGRADATION; OFF-STATE LEAKAGE CURRENT; RELIABILITY DESIGN; TIME DEPENDENT DIELECTRIC BREAKDOWN;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026117393     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.75165     Document Type: Article

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