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Volumn 14, Issue 8, 1993, Pages 396-399

Simulation of Sub-0.1-μm MOSFET's with Completely Suppressed Short-Channel Effect

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION;

EID: 0027640656     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.225591     Document Type: Article
Times cited : (61)

References (15)
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    • Y. Omura, S. Nakashima, K. Izumi, and T. Ishii, “0.1-μm-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer,” in IEDM Tech. Dig., 1991, pp. 675–678.
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  • 4
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    • A 0.1 μm-gate elevated source and drain MOSFET fabricated by phase-shifted lithography
    • S. Kimura, H. Noda, D. Hisamoto, and E. Takeda, “A 0.1 μm-gate elevated source and drain MOSFET fabricated by phase-shifted lithography,” in IEDM Tech. Dig., 1991, pp. 950–952.
    • (1991) IEDM Tech. Dig. , pp. 950-952
    • Kimura, S.1    Noda, H.2    Hisamoto, D.3    Takeda, E.4
  • 5
    • 0022700996 scopus 로고
    • Subthreshold slope of thin-film SOI MOSFETs
    • J.-P. Colinge, “Subthreshold slope of thin-film SOI MOSFETs,” IEEE Electron Device Lett., vol. EDL-7 pp. 244–246, 1986.
    • (1986) IEEE Electron Device Lett. , vol.EDL-7 , pp. 244-246
    • Colinge, J.-P.1
  • 6
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    • Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
    • M. V. Fischetti and S. E. Laux, “Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects,” Phys. Rev. B, vol. 38, pp. 9721–9745, 1988.
    • (1988) Phys. Rev. B , vol.38 , pp. 9721-9745
    • Fischetti, M.V.1    Laux, S.E.2
  • 8
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    • Sub-half-micrometer concave MOSFET with double LDD structure
    • K. Hieda et al., “Sub-half-micrometer concave MOSFET with double LDD structure,” IEEE Trans. Electron Devices, vol. 39, no. 3, pp. 671–676, 1992.
    • (1992) IEEE Trans. Electron Devices , vol.39 , Issue.3 , pp. 671-676
    • Hieda, K.1
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  • 11
    • 0024172927 scopus 로고
    • Hot-electron currents in deep-submicrometer MOSFETs
    • J. Chung, M.-C. Jeng, G. May, P. K. Ko, and C. Hu, “Hot-electron currents in deep-submicrometer MOSFETs,” in IEDM Tech. Dig., 1988, pp. 200–203.
    • (1988) IEDM Tech. Dig. , pp. 200-203
    • Chung, J.1    Jeng, M.-C.2    May, G.3    Ko, P.K.4    Hu, C.5
  • 13
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    • Quantum-mechanical threshold voltage shifts of MOS-FET's caused by high levels of channel doping
    • M. J. van Dort, P. H. Woerlee, A. J. Walker, C. A. Juffermans, and H. Lifka, “Quantum-mechanical threshold voltage shifts of MOS-FET's caused by high levels of channel doping,” in IEDM Tech. Dig., 1991, pp. 495–498.
    • (1991) IEDM Tech. Dig. , pp. 495-498
    • van Dort, M.J.1    Woerlee, P.H.2    Walker, A.J.3    Juffermans, C.A.4    Lifka, H.5
  • 14
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    • High transconductance and velocity overshoot in NMOS devices at the 0.1-μm gate-length level
    • G. A. Sai-Halasz, M. R. Wordeman, D. P. Kern, S. Rishton, and E. Ganin, “High transconductance and velocity overshoot in NMOS devices at the 0.1-μm gate-length level,” IEEE Electron Device Lett., vol. 9, pp. 464–466, 1988.
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    • Sai-Halasz, G.A.1    Wordeman, M.R.2    Kern, D.P.3    Rishton, S.4    Ganin, E.5
  • 15
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    • F. Venturi, R. K. Smith, E. C. Sangiorgi, M. R. Pinto, and B. Ricco, “A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs,” IEEE Trans. Computer-Aided Design, vol. 8, pp. 360–369, 1989.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.