Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs

Solid State Electronics

Volumn 38, Issue 3, 1995, Pages 611-614

  Gamiz F ^a   Banqueri, J ^a   Carceller, J E ^a   Lopez Villanueva J A ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC FIELDS; ELECTRON TRANSPORT PROPERTIES; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTOR DOPING;

COULOMB INTERACTION; ELECTRON MOBILITY; STRONG EFFECT COULOMB SCATTERING;

MOSFET DEVICES;

EID: 0029276282     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)00129-4     Document Type: Article

References (10)

1. A comprehensive model for Coulomb scattering in inversion layers
2. An analytical expression for phonon-limited electron mobility in silicon-inversion layers
3. Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFETs
4. Influence of the interface-state density on the electron mobility in silicon inversion layers