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Volumn 75, Issue 2, 1994, Pages 924-934

A comprehensive model for Coulomb scattering in inversion layers

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000609531     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.356448     Document Type: Article
Times cited : (84)

References (39)
  • 20
    • 84951891000 scopus 로고    scopus 로고
    • The Fourier transform of the potential perturbation rapidly decreases with the increase of the Q value as can be observed in Green’s function expression [Eq. (11)]
  • 33
    • 4243227379 scopus 로고
    • A detailed study of the scattering mechanisms for electrons in silicon inversion layers, which was published during the revision process of this article, can be found in
    • (1993) Phys. Rev. B , vol.48 , pp. 2244
    • Fischetti, M.V.1    Laux, S.E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.