Design and Performance of 0.1-μm CMOS Devices Using Low-Impurity-Channel Transistors (LICT's)

IEEE Electron Device Letters

Volumn 13, Issue 1, 1992, Pages 50-52

  Aoki, Masaaki ^a   Ishii, Tatsuya ^a   Yoshimura, Toshiyuki ^a   Kiyota, Yukihiro ^a   Iijima, Shimpei ^a   Yamanaka, Toshiaki ^a   Kure, Tokuo ^a   Ohyu, Kiyonori ^a   Nishida, Takashi ^a   Okazaki, Shinji ^a   Seki, Kohichi ^a   Shimohigashi, Katsuhiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - EPITAXIAL GROWTH; INTEGRATED CIRCUITS, VLSI; LITHOGRAPHY - ELECTRON BEAM; SEMICONDUCTOR DEVICES, MOS;

LOW-IMPURITY-CHANNEL TRANSISTORS (LICT); N-MOS TRANSISTORS; P-MOS TRANSISTORS; SHORT-CHANNEL EFFECTS;

INTEGRATED CIRCUITS, CMOS;

EID: 0026742666     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.144948     Document Type: Article

References (5)

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5. M. Aoki, S. Hanamura, T. Masuhara, and K. Yano, “Performance and hot-carrier effects of small CRYO-CMOS devices,” IEEE Trans. Electron Devices, vol. ED-34, p. 8, 1987.