A new scaling methodology for the 0.1 - 0.025μm MOSFET

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1993, Pages 33-34

  Fiegna, C ^a,b   Iwai, H ^a   Wada, T ^a   Saito, T ^a   Sangiorgi, E ^b   Ricco, B ^b  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84963965381     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.1993.760231     Document Type: Conference Paper

References (3)

1. Aoki et al., IEDM Tech. Dig., p. 939, 1990
2. Colinge, Kluwer, 1990.
3. Venturi et al., IEEE TCAD Vol. 10, p. 1276, 1991