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Volumn , Issue , 1994, Pages 79-82
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Design methodology for low-voltage MOSFETs
a a a
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER SIMULATION;
LEAKAGE CURRENTS;
LSI CIRCUITS;
STANDBY POWER SYSTEMS;
SUBSTRATES;
VOLTAGE CONTROL;
FORWARD SUBSTRATE VOLTAGE;
SHORT CHANNEL EFFECT;
THRESHOLD VOLTAGE;
MOSFET DEVICES;
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EID: 0028756728
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (12)
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References (4)
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