Recent advances in understanding total-dose effects in bipolar transistors

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 1, 1996, Pages 787-796

  Schrimpf, R D ^a  

^a University of Arizona   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETRY; GAIN MEASUREMENT; HIGH TEMPERATURE EFFECTS; LINEAR INTEGRATED CIRCUITS; RADIATION EFFECTS;

GAIN DEGRADATION; SURFACE RECOMBINATION VELOCITY;

BIPOLAR TRANSISTORS;

EID: 0030173118     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.510714     Document Type: Article

References (33)

1. R. L. Pease, R. M. Turfler, D. Platteter, D. Emily, and R. Blice, "Total Dose Effects in Recessed Oxide Digital Bipolar Microcircuits," IEEE Trans. Nucl. Sci. , vol. NS-30, pp. 4216-4223, 1983.
2. R. L. Pease, W. E. Combs, and S. Clark, "Long Term Ionization Response of Several BiCMOS VLSIC Technologies," in RADECS Proc. , pp. 114-118, 1991.
3. S. Feindt, J. -J. J. Hajjar, J. Lapham, and D. Buss, "XFCB: A High Speed Complementary Bipolar Process on Bonded SOI," in Proc. IEEE Bipolar Circuits and Tech. Mtg. , pp. 264-267, 1992.
4. E. W. Enlow, R. L. Pease, W. E. Combs, R. D. Schrimpf, and R. N. Nowlin, "Response of Advanced Bipolar Processes to Ionizing Radiation," IEEE Trans. Nucl. Sci. , vol. NS-38, pp. 1342 1351, 1991.
5. R. N. Nowlin, E. W. Enlow, R. D. Schrimpf, and W. E. Combs, "Trends in the Total-Dose Response of Modern Bipolar Transistors," IEEE Trans. Nucl. Sci. , vol. 39, pp. 2026-2035, 1992.
6. R. N. Nowlin, D. M. Fleetwood, R. D. Schrimpf, R. L. Pease, and W. E. Combs, "HardnessAssurance and Testing Issues for Bipolar/BiCMOS Devices," IEEE Trans. Nucl. Sci. , vol. 40, pp. 1686-1693, 1993.
7. 2)/s: Implications for Hardiness Assurance," IEEE Trans. Nucl. Sci. , vol. 41, pp. 2637-2641, 1994.
8. S. L. Kosier, W. E. Combs, A. Wei, R. D. Schrimpf, D. M. Fleetwood, M. DeLaus, and R. L. Pease, "Bounding the Total-Dose Response of Modern Bipolar Transistors," IEEE Trans. Nucl. Sci. , vol. 41, pp. 1864-1870, 1994.
9. A. Wei, S. L. Kosier, R. D. Schrimpf, D. M. Fleetwood, and W. E. Combs, "Dose-Rate Effects on Radiation-Induced Bipolar Junction Transistor Gain Degradation," Appl. Phys. Lett. , vol. 65, pp. 1918-1920, 1994.
10. R. D. Schrimpf, R. J. Graves, D. M. Schmidt, D. M. Fleetwood, R. L. Pease, W. E. Combs, and M. DeLaus, "Hardness Assurance Issues for Lateral PNP Bipolar Junction Transistors," IEEE Trans. Nucl. Sci. , vol. 42, pp. 1641-1649, 1995.
11. J. Beaucour, T. Carrière, A. Gach, and P. Poirot, "Total Dose Effects on Negative Voltage Regulator," IEEE Trans. Nucl. Sci. , vol. 41, pp. 2420-2426, 1994.
12. A. H. Johnston, G. M. Swift, and B. G. Rax, "Total Dose Effects in Conventional Bipolar Transistors and Linear Integrated Circuits," IEEE Trans. Nucl. Sci. , vol. 41, pp. 2427-2436, 1994.
13. S. McClure, R. L. Pease, W. Will, and G. Perry, "Dependence of Total Dose Response of Bipolar Linear Microcircuits on Applied Dose Rate," IEEE Trans. Nucl. Sci. , vol. 41, pp. 2544-2549, 1994.
14. T. Carrière, J. Beaucour, A. Gach, B. Johlander, and L. Adams, "Dose Rate and Annealing Effects on Total Dose Response of MOS and Bipolar Circuits," IEEE Trans. Nucl. Sci. , vol. 42, pp. 1567-1574, 1995.
15. A. H. Johnston, B. G. Rax, and C. I. Lee, "Enhanced Damage in Linear Bipolar Integrated Circuits at Low Dose Rate," IEEE Trans. Nucl. Sci. , vol. 42, pp. 1650-1659, 1995.
16. S. L. Kosier, R. D. Schrimpf, A. Wei, M. DeLaus, D. M. Fleetwood, and W. E. Combs, "Effects of Oxide Charge and Surface Recombination Velocity on the Excess Base Current of BJTs," in Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 211-214, 1993.
17. S. L. Kosier, R. D. Schrimpf, R. N. Nowlin, D. M. Fleetwood, M. DeLaus, R. L. Pease, W. E. Combs, A. Wei, and F. Chai, "Charge Separation for Bipolar Transistors," IEEE Trans. Nucl. Sci. , vol. 40, pp. 1276-1285, 1993.
18. D. M. Fleetwood, S. L. Kosier, R. N. Nowlin, R. D. Schrimpf, R. A. Reber, Jr. , M. DeLaus, P. S. Winokur, A. Wei, W. E. Combs, and R. L. Pease, "Physical Mechanisms Contributing to Enhanced Bipolar Gain Degradation at Low Dose Rates," IEEE Trans. Nucl. Sci. , vol. 41, pp. 1871-1883, 1994.
19. S. L. Kosier, A. Wei, R. D. Schrimpf, D. M. Fleetwood, M. DcLaus, R. L. Pease, and W. E. Combs, "Physically Based Comparison of Hot-Carrier-Induced and Ionizing-Radiation-Induced Degradation in BJTs," IEEE Trans. Electron Devices, vol. 42, pp. 436-444, 1995.
20. D. M. Schmidt, D. M. Fleetwood, R. D. Schrimpf, R. L. Pease, R. J. Graves, G. H. Johnson, K. F. Galloway, and W. E. Combs, "Comparison of Ionizing-Radiation-Induced Gain Degradation in Lateral, Substrate, and Vertical PNP BJTs," IEEE Trans. Nucl. Sci. , vol. 42, pp. 1541-1549, 1995.
21. A. Wei, S. L. Kosier, R. D. Schrimpf, W. E. Combs, and M. DeLaus, "Excess Collector Current Due to an Oxide-Trapped-Charge-Induced Emitter in Irradiated NPN BJTs," IEEE Trans. Electron Devices, vol. 42, pp. 923-927, 1995.
22. A. R. Hart, J. B. Smyth, Jr. , V. A. J. van Lint, D. P. Snowden, and R. E. Leadon, "Hardness Assurance Considerations for Long-Term Ionizing Radiation Effects on Bipolar Structures," IEEE Trans. Nucl. Sci. , vol. NS-25, pp. 1502-1507, 1978.
23. R. N. Nowlin, R. D. Schrimpf, B. W. Enlow, W. E. Combs, and R. L. Pease, "Mechanisms of Ionizing-Radiation-Induced Gain Degradation in Modern Bipolar Devices," in Proc. 1991 IEEE Bipolar Circuits and Tech. Mtg. , pp. 174-177, 1991.
24. V. G. K. Reddi, "Influence of Surface Conditions on Silicon Planar Transistor Current Gain," Solid-St. Electronics, vol. 10, pp. 305-334, 1967.
25. A. S. Grove and D. J. Fitzgerald, "Surface Effects on p-n Junctions: Characteristics of Surface Space-Charge Regions Under Non-Equilibrium Conditions," Solid-State Electronics, vol. 9, pp. 783-806, 1966.
26. P. J. McWhorter and P. S. Winokur, "Simple Technique for Separating the Effects of Interface Traps and Trapped-Oxide Charge in Metal-Oxide-Semiconductor Transistors," Appl. Phys. Lett. , vol. 48, pp. 133-135, 1986.
27. D. M. Fleetwood, M. R. Shaneyfelt, J. R. Schwank, P. S. Winokur, and F. W. Sexton, "Theory and Application of Dual-Transistor Charge Separation Analysis," IEEE Trans. Nucl. Sci. , vol. NS-36, pp. 1816-1824, 1989.
28. K. P. Galloway, M. Gaitan, and T. J. Russell, "A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics," IEEE Trans. Nucl. Sci. , vol. NS-31, pp. 1497-1501, 1984.
29. G. Groeseneken, H. E. Maes, M. Beltran, and R. F. DeKeersmaecker, "A Reliable Approach to Charge-Pumping Measurements in MOS Transistors," IEEE Trans. Electron Devices, vol. ED-31, pp. 42-53, 1984.
30. D. M. Fleetwood, S. S. Tsao, and P. S. Winokur, "Total-Dose Hardness Assurance Issues for SOI MOSFETs," IEEE Trans. Nucl. Sci. , vol. 35, pp. 1361-1367, 1988.
31. D. M. Fleetwood, D. E. Beutler, L. J. Lorence, Jr. , D. B. Brown, B. L. Draper, L. C. Riewe, H. B. Rosenstock, and D. P. Knott, "Comparison of Enhanced Device Response and Predicted X-Ray Dose Enhancement Effects on MOS Oxides," IEEE Trans. Nucl. Sci. , vol. 35, pp. 1265-1271, 1988.
32. M. DeLaus, D. Emily, B. Mappes, and R. Pease, "Converting a Bulk Rad-hard BiCMOS Technology into a Dielectrically-Isolated Process," IEEE Trans. Nucl. Sci. , vol. 40, pp. 1774-1779, 1993.
33. V. V. Belyakov, V. S. Pershenkov, A. V. Shalnov, and I. N. Shvetzov-Shilovsky, "Use of MOS Structures for the Investigation of Low-Dose-Rate Effects in Bipolar Transistors," IEEE Trans. Nucl. Sci. , vol. 42, pp. 1660-1666, 1995.