Excess Collector Current Due to an Oxide-Trapped-Charge-Induced Emitter in Irradiated NPN BJT's

IEEE Transactions on Electron Devices

Volumn 42, Issue 5, 1995, Pages 923-927

  Wei, A ^a   Kosier, S L ^b   Schrimpf, R D ^c   Combs, W E ^d   DeLaus, M ^e  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b VTC Inc   (United States)

^c UNIVERSITY OF ARIZONA   (United States)

^d NAVAL SURFACE WARFARE CENTER   (United States)

^e ANALOG DEVICES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; COMPUTER SIMULATION LANGUAGES; CURVE FITTING; ELECTRIC CURRENTS; GATES (TRANSISTOR); MATHEMATICAL MODELS;

BIPOLAR JUNCTION TRANSISTORS; EMITTER; EXCESS COLLECTOR CURRENT; INVERSION LAYER;

BIPOLAR TRANSISTORS;

EID: 0029305260     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.381989     Document Type: Article

References (12)

1. E. W. Enlow, R. L. Pease, W. E. Combs, R. D. Schrimpf, and R. N. Nowlin, “Response of advanced bipolar processes to ionizing radiation,” TREE Trans. Nucl. Sci. vol. 38. pp. 1342–1351. 1991.
2. R. N. Nowlin, R. D. Schrimpf, E. W. Enlow, W. E. Combs, and R. L. Pease, “Mechanisms of ionizing-radiation-induced gain degradation in modern bipolar devices.” IEEE BCTM Tech. Digest, pp. 174–177, 1991.
3. R. N. Nowlin, E. W. Enlow, R. D. Schrimpf, and W. E. Combs, “Trends in the total-dose response of modern bipolar transistors,” IEEE Trans. Nucl. Sci., vol. 39, pp. 2026–2035, 1992.
4. S. L. Kosier, R. D. Schrimpf, R. N. Nowlin, D. M. Fleetwood, M. DeLaus, R. L. Pease, W. E. Combs, A. Wei, and F. Chai, “Charge sepa r ation for bipolar transistors,” IEEE Trans. Nucl. Sci., vol. 40, pp. 1276–1285, 1993.
5. S. L. Kosier, R. D. Schrimpf. A. Wei, M. DeLaus D. M. Fleetwood, and W. E. Combs, “Effects of oxide charge and surface recombination velocity on the excess base current of BJT's,” IEEE BCTM Tech. Digest, pp. 211–214, 1993.
6. R. N. Nowlin, D. M. Fleetwood, R. D. Schrimpf, R. L. Pease, and W. E. Combs, “Hardness-assurance and testing issues for bipolar/BiCMOS devices,” IEEE Trans. Nucl. Sci., vol. 40, pp. 1686–1693, 1993.
7. S. Feindt, J.-J. J. Hajjar, J. Lapham, and D. Buss, “XFCB: A high speed complementary bipolar process on bonded SOI,” IEEE BCTM Tech. Digest, pp. 264–267, 1992.
8. P. Vande Vorrde, “TCAD for bipolar process development: A user's perspective,” IEEE BCTM Tech. Digest. pp. 101–108, 1991.
9. SILVACO International, ATLAS II 2D Device Simulation Framework User's Manual, Santa Clara, CA: 1993.
10. A. Wei, S. L. Kosier, R. D. Schrimpf, D. M. Fleetwood, and W. E. Combs, “Dose-rate effects on radiation-induced bipolar junction
11. transistor gain degradation, Appl. Phys. Lett., vol. 65, no. 15, pp. 1918-1920, 1994.
12. D. M. Fleetwood, S. L. Kosier, R. N. Nowlin, R. D. Schrimpf. R. A. Reber, Jr., M. DeLaus, P. S. Winokur, A. Wei, W. E. Combs, and R. L. Pease, “Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates,” to be published in IEEE Trans. Nucl. Sci. vol. 41, no. 6, pp. 1871–1883. 1994.