Dose Rate and Annealing Effects on Total Dose Response of MOS and Bipolar Circuits

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1567-1574

  Carriere T ^a   Beaucour, J ^a   Gach, A ^b   Johlander, B ^a   Adams, L ^c  

^a MATRA MARCONI SPACE ^*

^b AIRBUS DEFENCE AND SPACE   (Germany)

^c EUROPEAN SPACE AGENCY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BIPOLAR INTEGRATED CIRCUITS; DEGRADATION; DOSIMETRY; INTEGRATED CIRCUIT TESTING; RADIATION EFFECTS;

DOSE RATE; DOSE TOLERANCE;

MOS DEVICES;

EID: 0029520057     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.488751     Document Type: Article

References (11)

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