Bounding the Total-Dose Response of Modern Bipolar Transistors

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 1864-1870

  Kosier, S L ^a   Wei, A ^a   Schrimpf, R D ^a   Combs, W E ^b   Fleetwood, D M ^c   DeLaus, M ^d   Pease, R L ^e  

^a UNIVERSITY OF ARIZONA   (United States)

^b NAVAL SURFACE WARFARE CENTER   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d ANALOG DEVICES INC   (United States)

^e RLP Research   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; COMPUTATIONAL METHODS; ELECTRIC CURRENT CONTROL; ELECTRIC CURRENTS; GAIN CONTROL; JUNCTION GATE FIELD EFFECT TRANSISTORS; OXIDES; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS;

BASE CURRENT; BIPOLAR JUNCTION TRANSISTORS; CHARGE TRAPPING; EMITTER BASE JUNCTION;

BIPOLAR TRANSISTORS;

EID: 0028728514     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340518     Document Type: Article

References (15)

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