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Volumn 39, Issue 6, 1992, Pages 2026-2035

Trends in the Total-Dose Response of Modern Bipolar Transistors

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EID: 84939758992     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.211400     Document Type: Article
Times cited : (131)

References (18)
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    • Pease, R.L.1    Ellis, T.2
  • 4
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    • December
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    • Long, D.M.1
  • 5
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    • Dependence of Ionizing Radiation Induced hFE Degradation on Emitter Periphery
    • R.L. Pease, F.N. Coppage, E.D. Graham, “Dependence of Ionizing Radiation Induced hFE Degradation on Emitter Periphery,” IEEE Trans. Nucl. Sci., vol. NS-21, pp. 41-42, 1974.
    • (1974) IEEE Trans. Nucl. Sci , vol.NS-21 , pp. 41-42
    • Pease, R.L.1    Coppage, F.N.2    Graham, E.D.3
  • 6
    • 0018111401 scopus 로고
    • Hardness Assurance Considerations for Long-term Ionizing Radiation Effects on Bipolar Structures
    • A. Hart, J. Smyth, V. van Lint, D. Snowden, R. Leadon, “Hardness Assurance Considerations for Long-term Ionizing Radiation Effects on Bipolar Structures,” IEEE Trans. Nucl. Sci., vol. NS-25, pp. 1502–1507, 1978.
    • (1978) IEEE Trans. Nucl. Sci , vol.NS-25 , pp. 1502-1507
    • Hart, A.1    Smyth, J.2    van Lint, V.3    Snowden, D.4    Leadon, R.5
  • 7
    • 0020900961 scopus 로고
    • Total Dose Effects in Recessed Oxide Digital Bipolar Microcircuits
    • December
    • R.L. Pease, R.M. Turfler, D. Platteter, D. Emily, R. Blice, “Total Dose Effects in Recessed Oxide Digital Bipolar Microcircuits,” IEEE Trans. Nucl. Sci. vol. NS-30, pp. 4216–4223, December 1983.
    • (1983) IEEE Trans. Nucl. Sci , vol.NS-30 , pp. 4216-4223
    • Pease, R.L.1    Turfler, R.M.2    Platteter, D.3    Emily, D.4    Blice, R.5
  • 8
    • 0026960863 scopus 로고
    • Long Term Ionization Response of Several BiCMOS VLSIC Technologies
    • Montpellier, France, September
    • R.L. Pease, W.E. Combs, S. Clark, “Long Term Ionization Response of Several BiCMOS VLSIC Technologies,” RADECS 1991 Conference Proceedings, Montpellier, France, September 1991, pp. 114–118.
    • (1991) RADECS 1991 Conference Proceedings , pp. 114-118
    • Pease, R.L.1    Combs, W.E.2    Clark, S.3
  • 11
  • 12
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    • Polysilicon Emitters for Bipolar Transistors: A Review and Re-Evaluation of Theory and Experiment
    • July
    • I.R.C. Post, P. Ashburn, G.R. Wolstenholme, “Polysilicon Emitters for Bipolar Transistors: A Review and Re-Evaluation of Theory and Experiment,” IEEE Trans. Electron Devices, vol. 39, pp. 1717–1731, July 1992.
    • (1992) IEEE Trans. Electron Devices , vol.39 , pp. 1717-1731
    • Post, I.R.C.1    Ashburn, P.2    Wolstenholme, G.R.3
  • 14
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    • Modeling Hot-Carrier Effects in Polysilicon Emitter Bipolar Transistors
    • J.D. Burnett and C. Hu, “Modeling Hot-Carrier Effects in Polysilicon Emitter Bipolar Transistors,” IEEE. Trans. Electron Devices, vol. ED-35, pp. 2238–2244, 1988.
    • (1988) IEEE. Trans. Electron Devices , vol.ED-35 , pp. 2238-2244
    • Burnett, J.D.1    Hu, C.2
  • 15
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    • Interface Trap Formation Via the Two Stage H+ Process
    • Dec.
    • N.S. Saks and D.B. Brown, “Interface Trap Formation Via the Two Stage H+ Process,” IEEE Trans. Nucl. Sci., vol. NS-36, pp. 1848–1857, Dec. 1989.
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    • Saks, N.S.1    Brown, D.B.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.