Hardness assurance considerations for long-term ionizing radiation effects on bipolar structures

IEEE Transactions on Nuclear Science

Volumn 25, Issue 6, 1978, Pages 1502-1507

  Hart, Arthur R ^a   Smyth, John B ^a   van Lint, Victor A J ^a   Snowden, Donald P ^b   Leadon, Roland E ^c  

^a MISSION RESEARCH CORPORATION   (United States)

^b IRT Corporation ^*  (United States)

^c TITAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, BIPOLAR;

EID: 0018111401     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1978.4329561     Document Type: Article

References (17)

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2. Nelson, D. L., and R. J. Sweet, “Mechanisms of Ionizing Radiation Surface Effects on Transistors,” IEEE Trans. on Nucl. Sci., NS-13, No. 6, p. 197, December 1966.
3. Prince, J. L., and R. A. Stehlin, “Effects of CO60 Gamma Radiation on Noise Parameters of Bipolar Transistors,” IEEE Trans. on Nucl. Sci., NS-18, No. 6, p. 404, December 1971.
4. Reddi, V. G. K., “Influence of Surface Conditions on Silicon Planar Transistor Current Gain,” Solid State Electronics, Vol. 10, p. 305 (1967).
5. Grove, A. S., Physics and Technology of Semiconductor Devices, John Wiley & Sons, p. 300 (1967).
6. Hart, Arthur R., John B. Smyth, Jr., and V. A. J. van Lint, “Hardness Assurance for Long-Term Ionizing Radiation Effects on Bipolar Structures,” Topical Report (unpublished) MRC/SD-R-23, March 1978.
7. Smyth, J. B., Jr., A. R. Hart, and Victor A. J. van Lint, “Parameter Sensitivities for Hardness Assurance: Displacement Effects in Bipolar Transistors: Part II,” This issue — IEEE Trans. on Nucl. Sci., (1978).
8. Grove, op. cit., p. 174 & 186.
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11. 2: Processing Effects and Implications for Radiation Hardening,” IEEE Trans. on Nucl. Sci., NS-21, No. 6, p. 77, December 1974.
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14. Sivo, L. L., “Transistor Nonlinear Damage,” Document No. D180-14225-1 (under Contract No. 0NR-N000-14-72-C-0026), Boeing, p. 27, May 1972.
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16. Sivo, L. L., H. L. Hughes and E. E. King, “Investigation of Radiation-Induced Interface States Utilizing Gated Bipolar and MOS Structures,” IEEE Trans. on Nucl. Sci., NS-19, No. 6, p. 313, December 1972.
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