Total–dose hardness assurance issues for SOI MOSFETs

IEEE Transactions on Nuclear Science

Volumn 35, Issue 6, 1988, Pages 1361-1367

  Fleetwood, D M ^a   Tsao, S S ^a   Winokur, P S ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAMMA RAYS; SEMICONDUCTING SILICON; TRANSISTORS; X-RAYS;

RADIATION HARDNESS; SILICON ON INSULATOR TECHNOLOGY;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024170567     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25465     Document Type: Article

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