Electrical properties of composite gate oxides formed by rapid thermal processing

IEEE Transactions on Electron Devices

Volumn 43, Issue 4, 1996, Pages 636-646

  Misra, Veena ^a   Henson, William K ^a   Vogel, Eric M ^a   Hames, Greg A ^a   McLarty, Peter K ^a   Hauser, John R ^a   Wortman, Jimmie J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; GATES (TRANSISTOR); HOT CARRIERS; LEAKAGE CURRENTS; NITROGEN; OXIDATION; THERMAL EFFECTS;

CHARGE TRAPPING; RAPID THERMAL OXIDATION; RAPID THERMAL PROCESSING;

OXIDES;

EID: 0030130099     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.485547     Document Type: Article

References (35)

1. G. H. Kawamoto, G. R. Magyar, and L. D. Yau, "Hot-electron trapping in thin LPCVD SiOj dielectrics," IEEE Trans. Electron Devices, Vol. ED34, no. 12, pp. 2450, Dec. 1987.
2. P. K. Roy and A. K. Sinha, "Synthesis of high quality ultra-thin gate oxides for ULSI applications," AT&T Tech. J., vol. Nov/Dcc, 1988.
3. R. Moazzami and C. Hu, "A high quality stacked thermal/LPCVD gate oxide techonlogy for ULSI," IEEE Trans. Electron Devices, vol. 14, no. 2, Feb. 1993.
4. H.-H. Tseng, P. J. Tobin, J. D. Hayden, K.-M. Chang, and J. W. Miller, "A comparison of CVD stacked gate oxide and thermal gate oxide for 0.5 [im transistors subjected to process-induced damage," IEEE Trans. Electron Devices, vol. 40, no. 3, Mar. 1993.
5. A. J. Bauer, J. Wang, W. R. Aderhold, E. P. Butte, and H. Rysell, "Electrical properties of thin reoxidized dual-layer oxides," Thin Solid Films, vol. 230, 1993.
6. H.-H. Tseng and P. J. Tobin, "Thin CVD stacked gate dielectric for ULSI technology," IEDM Tech. Dig., pp. 321, 1993.
7. 2O Oxynitride/CVD TEOS stacked gate dielectric for submicron technology," IEEE SISC, 1994.
8. X. L. Xu, R. T. Kuehn, J. J. Wortman, and M. C. Oztilrk, "Rapid thermal chemical vapor deposition of thin silicon oxide films using silane and nitrous oxide." Appl. Phys. Lett, vol. 60, no. 24, June 1992.
9. V. Misra, X.-L. Xu, R. T. Kuehn, B. E. Hornung, D. S. Miles, J. R. Hauser, and J. J. Wortman, "High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide," J. Electronic Materials. March 1996.
10. Chapman, Melzak, Wortman. Ozturk, Fordham, and Sorrell, "A cylindricai tube based rapid thermal processor," presented at The Electrochemical Society, Pennington, NJ, 1991.
11. 2," Appl. Phys. Lett., vol. 35, p. 8, 1979.
12. 2 for VLSI." IEEE J. Solid-State Circuits, vol. SC-20, no. 1, pp. 26-43, 1985.
13. 2." J. Appl. Phys., vol. 63, no. 3, pp. 797-802, 1988.
14. C. H. Bjorkman, T. Yasuda, J. C.E. Shearon, Y. Ma, G. Lucovsky, U. Emmcrichs, C. Meyers, K. JLeo, and H. Kurz, " Influence of surface roughness on the electrical properties of Si-SiOa interfaces and on second harmonic generation at these interfaces," J. Vac. Sci. Technol. B, vol. 11, pp. 1521, 1993.
15. A. T. Wu, T. Y. Chan, V. Murali, S. W. Lee, J. Nulman, and M. Garner, "Mitridation induced surface donor layer in silicon and it's impact on the characteristics of n- and p-channel MOSFETs," IEDM Tech- Dig., pp. 271, 1989.
16. H. S. Momose, T. Morimoto, K. Yamabe, and H. Iwai, "Relationship between mobility and residual mechanical stress as measured by Raman spectroscopy for nitrided oxide gate MOSFKTs," 1EDM Tech. Dig., pp. 4.1.1, 199(X
17. T. Hori and H. Iwasaki, "Improved trarisconductance under high normal field in MOSFET's with ultrathin nitrided oxides," ïEEETrans. Electron Devices, vol. 10, p. 195, 1989.
18. _, "The impact of ultrathin nitrided oxide gate-dielectrics on MOS device performance improvement," JEDM Tech'Dig., pp. 459, 1989.
19. T. Hori, "Deep-submicron nitrided-oxide CMOS technology for 3.3 V operation," JEDM Tech. Dig., p. 837, 1990.
20. _, "Inversion layer mobility under high normal field in nitrided oxide MOSFET's," IEEE Trans. Electron Devices, vol. 37, p. 2058, 1990.
21. Z.-I. Ma, Z. II. Liu, J. T. Krick, H. J. Iluang, Y. C. Cheng, C. Hu, and P. K. Ko, "Optimization of gate oxide N20 anneal for CMOSFET's at room and ciyoaenics temperatures," IEEE Trans. Electron Devices, vol. 41, no. 8, p. 1~364, 1994.
22. F. \V. Smith and G. Ghidini, "Interaction of oxygen with Si(lll) and (100): Critical conditions for the growth of Si/SiOa," J. Electrochemical Society, vol. 129, no. 6, 1982.
23. P. Heremans, I. Witters, G. Groeseneken, and H. E. Macs, "Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation," IEEE Trans. Electron Devices, vol. 36, no. 9, pp. 1318, 1989.
24. R. P. Vasquez and A. Madhukar, "Strain-dependent defect formation kinetics and a correlalion between flatband voltage and nitrogen distribution in thermally nitrided SiONy/Si structures," Appl. Phys. Lett, vol. 47, pp. 998, 1985.
25. D. J. DiMaria, E. Cartier, and D. Arnold, "Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon," J. Appl. Phys., vol. 73, no. 7, pp. 3367-3384, 1993.
26. A. Yankova, L. D. Thanh, and P. Balk, "Effects of thermal nitridation on the trapping characteristics of SiU2 films," Solid Slate Electronics, vol. 30, p. 939, 1987.
27. Y. Okada, P. J. Tobin, V. Lakhotia, S. A. Ajuria, and R. I. Hedge, "Evaluation of interfacial nitrogen concentration of RTF oxynitrides by reoxidation," J. Electrochemical Society, vol. 140, p. L87, 1993.
28. J. T. Yount, P. M. Lenahan, and J. T. Krick, "Comparison of defect structure in N2U and NHa nitrided oxjde dielectrics," J. Appl. Phys., vol. 76, no. 3, p. 1754, 1994.
29. J. T. YoLinf and P. M. Lenahan, "Bridging nitrogen dangling bond centers and electron trapping in amorphous NHs -nitrided and reoxidized nilrided oxide films," J. Non-Crystalline Solids, vol. 164-165, p. 1069. 1994.
30. 2," IEEE Trans. Electron Devices, vol. 41, no. 2, pp. 191, 1994.
31. F. J. Feigl, W. B. Fowler, and K. L. Yip, "Oxygen vacancy model for the E' center in SiO2," AppL Phys. Lett., vol. 14, no. 3, pp. 225-229. 1974.
32. H. S. Witham and P. M. Lanahan, "Nature of the E' Deep hole trap in metal-oxide-semiconductors oxides," AppL Phys. Lett., vol. 51, no. 13, p. 1007, 1987.
33. [331 J. H. Stathis, J. C. Sokol, T.-Tieney, and J. Batey, "E' Centers and nitrogen-related defects in SiOa films," AppL Phys. Lett., vol. 56, no. 21, p. 2111, 1990.
34. 2 interface endurance property during rapid thermal nitridation and reoxidation processing," AppL Phys. Lett., vol. 54, no. 9, p. 822, 1989.
35. 2 grown or processed in NaO: The role of atomic oxygen," Appl. Phys. Lett., vol. 66, no. 12, p. 1492, 1995.