Inversion Layer Mobility under High Normal Field in Nitrided-Oxide MOSFET’s

IEEE Transactions on Electron Devices

Volumn 37, Issue 9, 1990, Pages 2058-2069

  Hori, Takashi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MICROSCOPIC EXAMINATION--TRANSMISSION ELECTRON MICROSCOPY; OXIDES; SPECTROSCOPY, AUGER ELECTRON;

INVERSION LAYER MOBILITY; NITRIDED OXIDES; RAPID THERMAL PROCESSING;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025484483     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.57169     Document Type: Article

References (34)

1. G. Baccarani, M. R. Wordeman, and R. H. Dennard, “Generalized scaling theory and its application to a 1/4 micrometer MOSFET design,” IEEE Trans. Electron Devices, vol. ED-31, p. 452, 1984.
2. A. G. Sabnis and J. T. Clemens, “Characterization of the electron mobility in the inverted <100> Si surface,” in IEDM Tech. Dig., p. 18, 1979.
3. S. C. Sun and J. D. Plummer, “Electron mobility in inversion and accumulation layers on thermally oxidized silicon surface,” IEEE Trans. Electron Devices., vol. ED-27, p. 1497, 1980.
4. S. Takagi, M. Iwase, and A. Toriumi, “On the universality of inversion-layer mobility in n- and p-channel MOSFET’s,” in IEDM Tech. Dig., p. 398, 1988.
5. D. K. Ferry, “Effects of surface roughness in inversion layer transport,” in IEDM Tech. Dig., p. 605, 1984.
6. C. G. Sodini, P. K. Ko, and J. L. Moll, “The effect of high fields on MOS device and circuit performance,” IEEE Trans. Electron Devices., vol. ED-31, p. 1386, 1984.
7. T.-C. Ong, P. K. Ko, and C. Hu, “50-Å gate-oxide MOSFET’s at 77 K,” IEEE Trans. Electron Devices, vol. ED-34, p. 2129, 1987.
8. T. Ito, T. Nakamura, and H. Ishikawa, “Advantages of thermal nitride and nitroxide gate films in VLSI process,” IEEE Trans. Electron Devices, vol. ED-29, p. 498, 1982.
9. T. Hori, Y. Naito, H. Iwasaki, and H. Esaki, “Interface states and fixed charges in nanometer-range thin nitrided oxides prepared by rapid thermal annealing,” IEEE Electron Device Lett., vol. EDL-7, p. 669, 1986.
10. T. Hori, H. Iwasaki, and K. Tsuji, “Charge-trapping properties of ultrathin nitrided oxides prepared by rapid thermal annealing,” IEEE Trans. Electron Devices, vol. 35, p. 904, 1988.
11. T. Hori and H. Iwasaki, “Ultra-thin re-oxidized nitrided-oxides prepared by rapid thermal processing,” in IEDM Tech. Dig., p. 570, 1987.
12. T. Hori, H. Iwasaki, and K. Tsuji, “Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing,” IEEE Trans. Electron Devices, vol. 36, p. 340, 1989.
13. T. Hori and H. Iwasaki, “Improved hot-carrier immunity in submicrometer MOSFET’s with reoxidized nitrided oxides prepared by rapid thermal processing,” IEEE Electron Device Lett., vol. 10, p. 64, 1989.
14. W. Yang, R. Jayaraman, and C. G. Sodini, “Optimization of low-pressure nitridation/reoxidation of SiO2 for scaled NOS devices,” IEEE Trans. Electron Devices, vol. 35, p. 935, 1988.
15. M. A. Schmidt, F. L. Terry, B. P. Mathur, and S. D. Senturia, “Inversion layer mobility of MOSFET’s with nitrided oxide gate dielectrics,” IEEE Trans. Electron Devices, vol. 35, p. 1627, 1988.
16. T. Kusaka, A. Hiraiwa, and K. Mukai, “Mobility degradation of nitrided oxide MOSFET’s,” J. Electrochem. Soc., vol. 135, p. 166, 1988.
17. T. Hori and H. Iwasaki, “Improved transconductance under high normal field in MOSFET’s with ultrathin nitrided oxides,” IEEE Electron Device Lett., vol. 10, p. 195, May 1989.
18. C. G. Sodini, T. W. Ekstedt, and J. L. Moll, “Charge accumulation and mobility in thin dielectric MOS transistors,” Solid-State Electron., vol. 25, p. 833, 1982.
19. J. T. Watt and J. D. Plummer, “Universal mobility-field curves for electrons and holes in MOS inversion layers,” in VLSI Symp. Tech. Dig., p. 81, 1987.
20. S. M. Goodnick, R. G. Gann, J. R. Sites, D. K. Ferry, C. W. Wilmsen, D. Fathy, and O. L. Krivanek, “Surface roughness scattering at the Si-SiO2 interface,” J. Vac. Sci. Technol., vol. B-1, p. 803, 1983.
21. F. F. Fang and W. E. Howard, “Negative field-effect mobility on (100) Si surface,” Phys. Rev. Lett., vol. 16, p. 797, 1966.
22. S. A. Schwarz and S. E. Russek, “Semi-empirical equations for electron velocity in silicon: Part II—MOS inversion layer,” IEEE Trans. Electron Devices, vol. ED-30, p. 1634, 1983.
23. M.-S. Lin, “The classical versus the quantum mechanical model of mobility degradation due to the gate field in MOSFET inversion layers,” IEEE Trans. Electron Devices, vol. ED-32, p. 700, 1985.
24. E. Arnold, “Surface charges and surface potential in silicon surface inversion layers,” IEEE Trans. Electron Devices, vol. ED-15, p. 1003, 1968.
25. H. Sakaki, K. Hoh, and T. Sugano, “Determination of interface-state density and mobility ratio in silicon surface inversion layers,” IEEE Trans. Electron Devices, vol. ED-17, p. 892, 1970.
26. T. Sakurai and T. Sugano, “Theory of continuously distributed trap states at Si-SiO2 interfaces,” J. Appl. Phys., vol. 52, p. 2889, 1981.
27. F. F. Fang and A. B. Fowler, “Transport properties of electrons in inverted silicon surfaces,” Phys. Rev., vol. 169, p. 619, 1968.
28. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981, ch. 7.
29. Y. Naito, T. Hori, H. Iwasaki, and H. Esaki, “Effects of nitrogen distribution in nitrided oxide prepared by rapid thermal annealing on its electrical characteristics,” J. Vac. Sci. Technol., vol. 5, p. 633, 1987.
30. R. P. Vasquez and A. Madhukar, “A kinetic study for the thermal nitridation of SiO2/Si,” J. Appl. Phys., vol. 60, p. 234, 1986.
31. Y. C. Cheng and E. A. Sullivan, “On the role of scattering by surface roughness in silicon inversion layers,” Surface Sci., vol. 34, p. 717, 1973.
32. S. Isomae, “Stress in silicon at Si3N4/SiO2 film edges and visco-elastic behavior of SiO2 films,” J. Appl. Phys., vol. 57, p. 216, 1985.
33. C. Herring, “Transport properties of a many-valley semiconductor,” Bell Syst. Tech. J., vol. 34, p. 237, 1955.
34. C. S. Smith, “Piezoresistance effect in germanium and silicon,” Phys. Rev., vol. 94, p. 42, 1954.