Evaluation of Interfacial Nitrogen Concentration of RTP Oxynitrides by Reoxidation

Journal of the Electrochemical Society

Volumn 140, Issue 6, 1993, Pages L87-L89

  Liao, Jimmy C ^d   Arias, Louie J ^b   Ajuria, Sergio A ^a   Hegde, Rama I ^a  

^a MOTOROLA INC   (United States)

^b Peak Systems Incorporated ^*  (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^d Aptix   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; MOSFET DEVICES; NITRIDES; THIN FILMS;

INTERFACE REACTION; OXYNITRIDES FILMS; REOXIDATION KINETICS;

ELECTROCHEMISTRY;

EID: 0027610888     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2221650     Document Type: Article

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