Electrical properties of thin reoxidized dual-layer oxides

Thin Solid Films

Volumn 230, Issue 2, 1993, Pages 150-155

  Bauer, A J ^a   Wang, J ^b   Aderhold, W R ^a   Burte, E P ^a   Ryssel, H ^a  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; OXIDES; SEMICONDUCTOR DEVICES;

DUAL LAYER OXIDES; INTERFACIAL PROPERTIES; THIN OXIDE LAYERS;

THIN FILMS;

EID: 0027642918     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(93)90508-M     Document Type: Article

References (16)

1. 2films
2. On dielectric breakdown in oxidized silicon