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Applied Physics Letters

Volumn 56, Issue 21, 1990, Pages 2111-2113

E' centers and nitrogen-related defects in SiO2 films

(4) Stathis, J H a Chapple Sokol, J b Tierney, E a Batey, J a

a IBM T J WATSON RESEARCH CENTER (United States)

b IBM (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038568127 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.103233 Document Type: Article

Times cited : (15)

References (18)

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