Reaction of Oxygen with Si(111) and (100): Critical Conditions for the Growth of SiO2

Journal of the Electrochemical Society

Volumn 129, Issue 6, 1982, Pages 1300-1306

  Smith, F W ^a   Ghidini, G ^a  

^a CITY COLLEGE OF NEW YORK   (United States)

Author keywords

epitaxy; films; oxidation; semiconductor

Indexed keywords

SILICA - THIN FILMS;

SEMICONDUCTING SILICON;

EID: 0020140027     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2124122     Document Type: Article

References (16)

1. “Proc. Intern. Conf. on the Physics of SiO2 and Its Interfaces,” S. T. Pantelides, Editor, Pergamon, New York (1978).
2. F. W. Smith, Surf. Sci., 80, 388 (1979).
3. F. W. Smith and B. Meyerson, Thin Solid Films, 60, 227 (1979).
4. G. Ghidini and F. W. Smith, Unpublished. 5. J. J. Lander and J. Morrison, J. Appl. Phys., 33, 2089 (1962).
5. J. J. Lander and J. Morrison, J. Appl. Phys., 33, 2089 (1962).
6. C. Gelain, A. Cassuto, and P. Le Goff, Oxid. Met., 3, 139 (1971).
7. E. A. Gulbransen and S. A. Jansson, in “Heterogeneous Kinetics and Elevated Temperatures,” G. R. Belton and W. L. Worrell, Editors, p. 181, Plenum Press, New York (1970); Oxid. Met., 4,181 (1972).
8. D. E. Rosner and H. D. Allendorf, J. Phys. Chem., 74, 1829 (1970).
9. C. Wagner, J. Appl. Phys., 29,1295 (1958).
10. F. W. Smith, B. Meyerson, and W. Miller, Appl. Phys. Lett., 31, 565 (1977).
11. R. J. Madix and A. A. Susu, Surf. Sci., 20, 377 (1970).
12. R. F. Lever and H. R. Wendt, Surf. Sci., 19, 435 (1970).
13. F. Herman, I. P. Batra, and R. V. Kasowski, in “Proc. Intern. Conf. on the Physics of SiO2 and Its Interfaces,” S. T. Pantelides, Editor, p. 333, Pergamon, New York (1978).
14. C. R. Helms, J. Vac. Sci. Technol, 16, 608 (1979).
15. O. Kubachewski and T. G. Chart, J. Chem. Thermodyn., 6, 467 (1974).
16. J. Eisinger and J. T. Law, J. Chem. Phys., 30, 410 (1959).