Thermal Nitridation of Si and SiO2 for VLSI

IEEE Journal of Solid-State Circuits

Volumn 20, Issue 1, 1985, Pages 26-43

  Moslehi, Mehrdad M ^a   Saraswat, Krishna C ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON COMPOUNDS - THERMAL EFFECTS; SEMICONDUCTOR DEVICES, MIS - MANUFACTURE;

GROWTH KINETICS; NITROGEN-RICH LAYERS; SILICON NITRIDE; THERMAL NITRIDATION; ULTRATHIN FILMS;

INTEGRATED CIRCUITS, VLSI;

EID: 0022009786     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1985.1052274     Document Type: Article

References (62)

1. H. Grinolds, S. Wong, T. Ekstedt, C. Sodini, S Kwan, K. Jackson, and L. Martinez, “ Nitnded-oxides for thin gate dielectrics in MOS devices,” in IEDM Tech Dig., p. 42, 1982.
2. I. Kato, T. Ito, S. Inoue, T. Nakamura, and H. Isikawa, “Ammonia-annealed SiO 2 films for thin-gate insulator,” Japan. J. Appl. Phys., vol. 21, suppl. 21–1, p. 153, 1982.
3. A. Kovchavtsev and A. Frantsuzov, Mikroelektromka, vol. 8, no. 5, p. 439, 1979.
4. T. Ito, T. Nakamura, and H. Ishikawa, “Advantages of thermal nitride and nitroxide gate films in VLSI processes,” IEEE Trans. Electron. Devices, vol. ED-29, p. 498, Apr. 1982.
5. S. Murarka, C. Chang, and A. Adams, “Thermal nitridation of silicon in ammonia gas: Composition and oxidation resistance of the resulting films,” J. Electrochem. Soc., vol. 126, no. 6, p. 996, 1979.
6. T. Ito, T. Nozaki, H Arakawa, and M. Shinoda, “Thermally grown silicon nitride films for high performance MNS devices,” Appl. Phys. Lett., vol. 32, no. 5, 330, 1978.
7. T. Ito, H. Ishikawa, and Y Tukakawa, “Thermal nitridation of silicon in advanced LSI processing,” Japan. J. Appl. Phys., vol. 20, suppl. 20–1 p. 33, 1981.
8. T. Ito, T. Nozaki, H. Ishikawa, and Y Fukukawa, “Thermal nitride gate FET technology for VLSI devices,” in ISSCC Dig. Tech. Papers, p. 74, 1980.
9. M. M. Moslehi and K. C. Saraswat, “ Thermal nitridation of silicon and silicon dioxide in a cold-wall RF-heated reactor,” in Proc. Symp. Silicon Nitride Thin Insulating Films, Electrochem. Soc., vol. 83–8, pp. 324–345, 1983.
10. S. Wong and W. Oldham, “A multiwafer plasma system for anodic nitridation and oxidation,” IEEE Electron Device Lett., vol. EDL-5, p. 175, May 1984.
11. T. Ito, I. Kato, T. Nakamura, and H Ishikawa, “Thermal nitride thin films for VLSI circuits,” in Proc. Electrochem. Soc 163rd Meeting, p. 295, 1983.
12. M. Hirayama, T. Matsukawa, H. Arima, Y. Ohno, N. Tsubouchi, and H. Nakata, “Plasma anodic mtndation of silicon in N 2 -H 2 system,” J. Electrochem. Soc., vol. 131, no. 3, p. 663, 1984.
13. T. Sugii, T. Ito, and H. Ishikawa, “Excimer laser enhanced nitridation of silicon substrates,” Appl. Phys. Lett., vol. 45, no. 9, p. 966, 1984.
14. R. Aucoin, C. Kirk, M. Naiman, F. Terry, R. Reif, and S. Senturia, “Kinetics of nitridation of silica films,” presented at the ECS Meeting, 1981.
15. S. Wong, C. Sodim, T. Ekstedt, H. Grinolds, K. Jackson, S. Kwan, and W. Oldham, “Low pressure nitrided-oxide as a thin gate dielectric for MOSFET’s,” J. Electrochem. Soc., vol. 130, no. 5, p 1139, 1983.
16. Y. Hayafuji and K. Kajiwara, “Nitridation of silicon and oxidized silicon,” J. Electrochem. Soc., vol. 129, no. 9, p. 2102, 1982.
17. F. Habraken, A. Kuiper, Y. Tamminga, and J. Theeten, “Thermal nitridation of silicon dioxide films,” J Appl. Phys., vol 53, no. 10, p. 6996, 1982.
18. T. Ito, T. Nozaki, and H. Ishikawa, “Direct thermal nitridation of silicon dioxide films in anhydrous ammonia gas,” J. Electrochem. Soc., vol. 127, no. 9, p. 2053, 1980.
19. M. M. Moslehi and K. C. Saraswat, “Electrical characteristics of devices fabricated with ultrathin thermally grown silicon nitride and nitroxide gate insulators,” in 3rd Symp. VLSI Technol. Dig. Tech. Papers (Hawaii), p. 92, 1983.
20. C. Jenq, T. Wong, B Joshi, and C Hu, “High temperature and extended endurance characteristics of EEPROM,” in IEDM Tech. Dig., p. 585, 1983.
21. J. Lee and V. Dham, “Design considerations for scaling FLOTOX E 2 PROM cell,” in IEDM Tech. Dig., p. 589, 1983.
22. S. Lai, J. Lee, and V. Dham, “Electrical properties of nitrided-oxide systems for use in gate dielectrics and EEPROM,” in IEDM Tech. Dig., p. 190, 1983.
23. C. Jenq, T. Chiu, B. Joshi, and J. Hu, “Properties of thin oxynitride films used as floating-gate tunneling dielectrics,” in IEDM Tech. Dig., p. 811, 1982.
24. T. Chang, H. Jones, C. Jenq, W. Johnson, J. Lee, S. Lai, and V. Dham, “Oxidized nitridized oxide (ONO) for high performance EEPROM’s,” in IEDM Tech. Dig., p. 810, 1982.
25. S. Mehrotra, T. Wu, T. Chiu, and G Perlegos, “A 64 Kb CMOS EEPROM with on-chip ECC,” in ISSCC Dig. Tech. Papers, p. 142, 1984.
26. A. Gupta, T. Chiu, M. Chang, A. Renninger, and G. Perlegos, “A 5V-only 16K EEPROM utilizing oxynitride dielectrics and EPROM redundancy,” in ISSCC Dig. Tech. Papers, p. 184, 1982.
27. T. Chang, C. Ho, M. Manley, and S. Makherjee, “Optimized and reliable tunnel dielectric for ten million cycle endurance EEPROM,” presented at the 165th ECS Meeting, May 1984.
28. C. Sodim, S. Wong, T. Ekstedt, H. Grinolds, and W. Oldham, “A JMOS transistor fabricated with 100 A low-pressure nitrided-oxide gate dielectric,” IEEE Trans. Electron Devices, vol. ED-31, p. 17, 1984.
29. S. Hijiya, T. Ito, T. Nakamura, H. Ishikawa, and H. Arakawa, “A nitride barrier avalanche-injection EAROM,” in ISSCC Dig Tech. Papers, p. 116, 1982.
30. T. Ito, S. Hijiya, T. Nozaki, H. Arakawa, H. Ishikawa, and M Shinoda, “Low-voltage alterable EAROM cells with nitride-barrier avalanche-injection MIS (NAMIS),” IEEE Trans. Electron Devices, vol ED-26, June 1979.
31. F. Terry, M. Naiman, R. Aucoin, and S. Senturia, “Megarad-resistant 10 nm gate dielectrics,” in IEDM Tech. Dig., p. 4389, 1981.
32. F. Terry, R. Aucoin, M. Naiman, and S. Senturia, “Radiation effects in nitrided oxides,” IEEE Electron Device Lett., vol EDL-4, p. 191, June 1983.
33. T. Ito, H. Arakawa, T. Nozaki, and H. Ishikawa, “Retardation of destructive breakdown of SiO 2 films annealed in ammonia gas,” J. Electrochem. Soc., vol. 127, no. 10, p. 2248, 1980.
34. S. Lai, D. Dong, and A. Hartstein, “Effects of ammonia anneal on electron trapping in silicon dioxide,” J. Electrochem. Soc., vol. 129, no. 9, p. 2042, 1982.
35. S. Chang, N. Johnson, and S. Lyon, “Capture and tunnel emission of electrons by deep levels in ultrathin nitrided oxides on silicon,” Appl. Phys. Lett., vol. 44, no. 3, p. 316, 1984.
36. Y. Hayafuji, K. Kajiwara, and S. Usui, “Shrinkage and growth of oxidation stacking faults during thermal nitridation of silicon and oxidized silicon,” J. Appl. Phys., vol. 53, no. 12, p. 8639, 1982.
37. A. Reisman, M. Berkenblit, A. Ray, and C. Merz, “Nitridation of silicon in a multiwafer plasma system,” J. Electronic Materials, vol. 13, no 3, p. 505, 1984.
38. J. Chen, T. Kuiper, Y. Tamminga, and D. Toole, “HiPOx thermal nitridation of Si and SiO 2 ,” presented at the ECS Meeting, 1984.
39. T. Ito, S. Hijia, T. Nozaki, H. Arakawa, M. Shmoda, and Y Fukukawa, “Very thin silicon nitride films grown by direct thermal reaction with nitrogen,” J. Electrochem. Soc., vol. 125, no. 3, p. 448, 1978.
40. C. Wu, C. King, M. Lee, and C. Chen, “Growth kinetics of silicon thermal nitridation,” J. Electrochem. Soc., vol. 129, no. 7, p. 1559, 1982.
41. B Deal and A. Grove, J. Appl. Phys., vol. 36, p. 3770, 1965.
42. T. Tan and U. Gosele, “Point defects and diffusion processes in silicon,” in VLSI Science & Technology, K. Bean and G. Rozgonyi, Eds., 1984.
43. M. M. Moslehi, C. J. Han, K. C. Saraswat, C. R. Helms, and S. Shatas, “ Compositional studies of thermally nitrided silicon dioxide (nitroxide),” in Computer-Aided Design of Integrated Circuit Fabrica¬ tion Processes for VLSI Devices, Stanford University, Final Report, July 1984, to be published in J. Electrochem. Soc.
44. C. J. Han, M. M. Moslehi, C. R. Helms, and K. C. Saraswat, “ Time-dependent compositional variation in SiO 2 films nitrided in ammonia,” Appl. Phys. Lett., to be published.
45. S. Wong, S. Kwan, H. Grinolds, and W. Oldham, “Composition and electrical properties of nitrided-oxide and reoxidized nitrided-oxide,” oxide,” presented at the ECS Meeting, May 1983.
46. J. Amano and T. Ekstedt, “Characterization of thermally nitrided silicon dioxide,” Appl. Phys. Lett., vol. 41, no. 9, p. 816, 1982.
47. S. Tatsuta, H. Nishi, and T. Ito, “A backscattering-channeling study of thermally grown nitride films on silicon,” Japan. J Appl. Phys., vol. 21, no 2, p. L113, 1982.
48. F Habraken, A Kuiper, A. Oostrom, Y. Tamminga, and J. Theeten, “Characterization of low-pressure chemical vapor deposited and thermally grown silicon nitride films,” J. Appl Phys., vol. 53, no. 1, p. 404, 1982.
49. F. Herman, “Electronic structure of the Si-SiO 2 interface,” in Proc. 2nd Int. Conf., Insulating films on Semiconductors, M. Schulz and G. Pensi, Eds., Berlin, Germany: Springer-Verlag 1981, p. 2
50. P Fahey, R. W. Dutton, and M. M. Moslehi, “Effect of thermal nitridation processes on boron and phosphorus diffusion in (100) silicon,” Appl. Phys. Lett., vol. 43, p. 683, 1983.
51. S. Mizuo, T. Kusaka, A. Shintani, M. Nanba, and H. Higuchi, “Effect of Si and SiO 2 thermal nitridation on impurity and oxidation induced stacking fault size in Si,” J. Appl. Phys., vol. 54, no. 7, p. 3860, 1983.
52. A. Shintani, T. Kusaka, S. Mizuo, K. Hayashi, and H. Okuhira, “The influence of thermal silicon nitride formation on VLSI fabrication,” in 3rd Symp. VLSI Technol. Dig. Tech. Papers (Hawaii), p. 90, 1983.
53. P. Fahey, G. Barbuscia, M. M. Moslehi, and R. W. Dutton, “Kinetics of thermal nitridation processes in the study of dopant diffusion mechanisms in silicon,” Appl. Phys. Lett., to be published.
54. E. Suzuki and Y. Hayashi, J. Appl Phys., vol. 53, p 8880, 1982.
55. L. Yau, “Arguments for electron conduction in silicon nitride,” IEEE Electron Device Lett., vol. EDL-5, p. 318, Aug. 1984
56. A. Samuelson and K Mar, “ The correlations between physical and electrical properties of PECVD SiN with their composition ratios,” J. Electrochem. Soc., vol. 129, no. 8, 1982.
57. B. Andrews, B. Jackson, and W. Polito, “High-field dark currents in thin CVD silicon nitride,” J. Appl. Phys., vol. 51, no. 1, Jan. 1980.
58. M. M. Moslehi and K. C Saraswat, “Ultrathin thermal silicon nitride and nitroxide gate insulators for VLSI,” in IEDM Tech. Dig., p. 165, 1984.
59. T. Ekstedt, S. Wong, Y. Strausser, J. Amano, S. Kwan, and H. Grinolds, “Material and electrical properties of thin (10 nm) SiO 2 films nitrided in low pressure ammonia,” Insulating Films on Semiconductors, J. F. Verweij and D. R. Wolters, Eds., p. 189, 1983.
60. S. Chang and S. Lyon, “Analysis of current transport and charge trapping in ultrathin nitrided oxide MIS capacitors,” in 42nd DRC, June 1984.
61. M. M. Moslehi and K. C. Saraswat, “Studies of trapping and conduction in ultrathin SiO 2 gate insulators,” in IEDM Tech. Dig., p. 157, 1984.
62. F. Terry, P. Wyatt, M. Naiman, B. Mathur, and C. Kirk, “High-field electron capture and emission in nitrided oxides,” in 42nd DRC, June 1984.