Study of the SiO2/Si interface endurance property during rapid thermal nitridation and reoxidation processing

Applied Physics Letters

Volumn 54, Issue 9, 1989, Pages 822-824

  Shih, D K ^a   Kwong, D L ^a   Lee, S ^b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b Microelectronics Division ^*

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039761020     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.101556     Document Type: Article

References (16)