Effects of thermal nitridation on the trapping characteristics of SiO2 films

Solid State Electronics

Volumn 30, Issue 9, 1987, Pages 939-946

  Yankova, A ^a   Thanh, L Do ^a   Balk, P ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDES - TESTING; SEMICONDUCTING SILICON;

THERMAL NITRIDATION;

FILMS;

EID: 0023421875     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(87)90130-4     Document Type: Article

References (28)

1. Advantages of thermal nitride and nitroxide gate films in VLSI process
2. Radiation Effects on Oxynitride Gate Dtelectrics
3. Megarad-Resistant 10nm Gate Dielectrics
4. High-field electron capture and emission in nitrided oxides
5. Anodic nitridation of silicon and silicon dioxide
6. Thermal Nitridation of Si and SiO/sub 2/ for VLSI
7. Deep-depletion breakdown voltage of silicon-dioxide/silicon MOS capacitors
8. Radiation-Induced Defects in SiO2 as Determined with XPS
9. Defect structure and generation of interface states in MOS structures
10. High temperature annealing behavior of electron traps in thermal SiO2