Ballistic-electron-emission microscopy of semiconductor heterostructures

Current Opinion in Solid State and Materials Science

Volumn 3, Issue 1, 1998, Pages 38-44

  Bell, L Douglas ^a   Narayanamurti, Venkatesh ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b Santa Barbara   (United States)

Author keywords

BEEM ballistic electron emission microscopy; M S metal semiconductor; STM scanning tuneling microscopy

Indexed keywords

EID: 0004400630     PISSN: 13590286     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-0286(98)80063-6     Document Type: Article

References (44)

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27. 1-xAs/GaAs heterostructures: conduction band offsets. transport mechanisms, and band structure effects. Phys Rev B. 56:1997;2026-2035 A thorough study of the AlGaAs/GaAs system. Results are presented for the entire Al alloy fraction range. Phonon-assisted intervalley scattering was proposed for certain temperature-dependent contributions to the BEEM spectrum.
28. Smith DL, Kogan SM. Theory of ballistic-electron-emission microscopy of buried semiconductor heterstructures. Phys Rev B. 54:1996;10354-10357 Theoretical treatment of BEEM spectroscopy through single and double barrier semiconductor heterostructures. Calculated transmission coefficients yielded agreement with previously reported BEEM results on double-barrier resonant tunneling structures.
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30. O'Shea JJ, Reaves CM, DenBaars SP, Chin MA, Narayanamurti V. Conduction band offsets in ordered GalnP/GaAs heterostructures studied by ballistic-electron-emission microscopy. Appl Phys Lett. 69:1996;3022-3024 Band-offset measurements on GalnP/GaAs. The offset was observed to decrease with increasing alloy ordering in the GalnP layer. Control over this ordering was demonstrated by growth on misoriented GaAs substrates.
31. Bhargava S, Blank HR, Narayanamurti V, Kroemer H. Fermi level pinning position at the Au-lnAs interface determined using ballistic-electron emission microscopy. Appl Phys Lett. 70:1997;759-761 BEEM of Au/lnAs/AlSb. Comparison of the measured Au/AlSb band offset with that of lnAs/AlSb yielded the Fermi level pinning position in lnAs.
32. 1-xAs/GaAs interface by ballistic-electron-emission microscopy. Appl Phys Lett. 69:1996;940-942 First imaging of misfit dislocations at the InGaAs/GaAs (100) interface. Surface topographic protrusions resulting from the dislocations were observed in conjunction with diminished BEEM current; a relative displacement of the two features demonstrated that the source was subsurface.
33. Lee EY, Bhargava S, Chin MA, Narayanamurti V. Atomic and mesoscopic scale characterization of semiconductor interfaces by ballistic electron emission microscopy. J Vac Sci Technol A. 15:1997;1351-1357.
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38. Rubin ME, Blank HR, Chin MA, Kroemer H, Narayanamurti V. Local conduction band offset of GaSb self assembled quantum dots on GaAs. Appl Phys Lett. 70:1997;1590-1592.
39. Lee EY, Narayanamurti V, Smith DL. Monte Carlo simulations of ballistic electron emission microscopy imaging and spectroscopy of buried microscopic structures. Phys Rev B. 55:1997;16033-16036.
40. 2/Si. Suppression of BEEM transmission was observed in areas which had been charged by the STM tip. An increase in BEEM threshold voltage was also observed in these areas.
41. 2. J Vac Sci Technol B. 14:1996;2864-2871.
42. Ludeke R, Wen HJ. Gate oxide characterization with ballistic-electron-emission microscopy. Microel Eng. 36:1997;255-262.
43. 2 layers. By comparing Monte Carlo calculations to experimental spectra, breakdown of the oxide was found to be much more difficult to achieve than expected. The implication was that impurities or defects, rather than an intrinsic material limit, are responsible for breakdowns observed in devices.
44. 2 layer. Theoretical calculations provided good agreement with the extracted image-force dielectric constant.