Study of Interfacial Point Defects by Ballistic Electron Emission Microscopy

Physical Review Letters

Volumn 78, Issue 16, 1997, Pages 3133-3136

  Meyer, T ^a   von Kanel H ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COBALT COMPOUNDS; DIFFUSION; ELECTRIC CURRENT MEASUREMENT; ELECTRON EMISSION; ELECTRON SCATTERING; INTERFACES (MATERIALS); POINT DEFECTS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; THIN FILMS;

BALLISTIC ELECTRON EMISSION MICROSCOPY; COBALT SILICIDE; CONDUCTION BAND MINIMA; SCHOTTKY BARRIER;

ELECTRON MICROSCOPY;

EID: 7044249793     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.78.3133     Document Type: Article

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