Stressing and high field transport studies on device-grade SiO2 by ballistic electron emission spectroscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 2855-2863

  Ludeke, R ^a   Wen, H J ^a   Cartier, E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007280025     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588845     Document Type: Article

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