Ballistic electron emission microscopy studies of electron scattering in Au/GaAs Schottky diodes damaged by focused ion beam implantation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 2, 1996, Pages 617-622

  McNabb, J W ^a   Craighead, H G ^a  

^a School of Chemical and Molecular Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON EMISSION; ELECTRON TRANSPORT PROPERTIES; GOLD; INTERFACES (MATERIALS); ION BEAMS; ION IMPLANTATION; MATHEMATICAL MODELS; QUANTUM THEORY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

BALLISTIC ELECTRON EMISSION SPECTROSCOPY; ELECTRON TRANSMISSION; ION BEAM IMPLANTATION;

ELECTRON SCATTERING;

EID: 0030107820     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589146     Document Type: Article

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