Schottky barrier formation at metal/n-ZnSe interfaces and characterization of Au/n-ZnSe by ballistic electron emission microscopy

Journal of Applied Physics

Volumn 81, Issue 12, 1997, Pages 7870-7875

  Coratger, R ^a   Girardin, C ^a   Beauvillain, J ^a   Dharmadasa, I M ^b   Samanthilake, A P ^b   Frost, J E F ^b,d   Prior, K A ^c   Cavenett, B C ^c  

^a CEMES CNRS   (France)

^b SHEFFIELD HALLAM UNIVERSITY   (United Kingdom)

^c HERIOT WATT UNIVERSITY   (United Kingdom)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHARACTERIZATION; DEFECTS; EMISSION SPECTROSCOPY; GOLD; SCHOTTKY BARRIER DIODES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ZINC COMPOUNDS; SURFACES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

BALLISTIC ELECTRON EMISSION SPECTROSCOPY; FERMI LEVEL PINNING; SURFACE DEFECTS; ZINC SELENIDE;

INTERFACES (MATERIALS);

EID: 0031167951     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365395     Document Type: Article

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