Observation of misfit dislocations at the InxGa1-xAs/GaAs interface by ballistic-electron-emission microscopy

Applied Physics Letters

Volumn 69, Issue 7, 1996, Pages 940-942

  Lee, E Y ^a   Bhargava, S ^a   Chin, M A ^a   Narayanamurti, V ^a   Pond, K J ^a   Luo, K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON MICROSCOPY; ELECTRON SCATTERING; ELECTRON SPECTROSCOPY; INTERFACES (MATERIALS); SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

BALLISTIC ELECTRON EMISSION MICROSCOPY; BAND BENDING; CROSS HATCH PATTERN; LOGARITHMIC FUNCTION; MISFIT DISLOCATION; SCHOTTKY BARRIER HEIGHT;

DISLOCATIONS (CRYSTALS);

EID: 0030211770     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116950     Document Type: Article

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