Comparison of Au contacts to Si, GaAs, InxGa1-xP, and ZnSe measured by ballistic electron emission microscopy

Materials Chemistry and Physics

Volumn 46, Issue 2-3, 1996, Pages 224-229

  Morgan, B A ^a   Talin, A A ^b   Bi, W G ^a   Kavanagh, K L ^a   Williams, R S ^b   Tu, C W ^a   Yasuda, T ^c   Yasui, T ^c   Segawa, Y ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

Ballistic electron emission microscopy; Electronic properties; Gold contacts

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON EMISSION; ELECTRONIC PROPERTIES; GOLD; MICROSCOPIC EXAMINATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING;

BALLISTIC ELECTRON EMISSION MICROSCOPY; GOLD CONTACTS;

ELECTRIC CONTACTS;

EID: 0030290393     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(97)80017-X     Document Type: Article

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