Gate oxide characterization with ballistic electron emission microscopy

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 255-262

  Ludeke, R ^a   Wen, H J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRON EMISSION; ELECTRON MICROSCOPY; GATES (TRANSISTOR); HOT CARRIERS; SEMICONDUCTOR DEVICE STRUCTURES; STRESSES; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; MOS DEVICES;

BALLISTIC ELECTRON EMISSION MICROSCOPY (BEEM); GATE OXIDE CHARACTERIZATION; STRESS INDUCED TRAPS; OXIDE CHARGE DISTRIBUTION; THRESHOLD SHIFTS;

MOS DEVICES; ELECTRON MICROSCOPY;

EID: 0031150263     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00059-2     Document Type: Article

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