Simulation and correction of geometric distortions in scanning Kelvin probe microscopy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1051-1055

  Efimov, Anton ^a   Cohen, Sidney R ^b  

^a Silicon MDT   (Russian Federation)

^b WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; COMPUTATIONAL GEOMETRY; ESTIMATION; GOLD; METALLIC FILMS; MICROSCOPIC EXAMINATION; SILICON WAFERS; SURFACE TOPOGRAPHY; CHEMICAL BEAM EPITAXY; INTERFACES (MATERIALS); MAGNETIC MATERIALS; NANOSTRUCTURED MATERIALS; NITRIDES; OXIDES; PLASMA DIAGNOSTICS; PLASMA ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE CHEMISTRY; X RAY PHOTOELECTRON SPECTROSCOPY;

BLIND ESTIMATION; BOLTZMANN CONSTANT; SCANNING KELVIN PROBE MICROSCOPY; DEPTH PROFILING; EIREV; FOCUSED-ION-BEAM MICROMACHINING (FIBM); GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMAS (ICP); MAGNETOMETRY; NANOWIRES; PHYSICAL VAPOR DEPOSITION (PVD); SUPERPARAMAGNETIC NANOSPHERE ASSAYS;

SURFACE CHEMISTRY; VACUUM TECHNOLOGY;

EID: 0034215824     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582472     Document Type: Article

References (16)

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10. The technique has been subsequently refined to include a second average over surface points. This procedure does not significantly improve the results reported here.
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