Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 476-480

  Dimakis, E ^a,b   Georgakilas, A ^a,b   Androulidaki, M ^a,b   Tsagaraki, K ^a,b   Kittler, G ^a,b   Kalaitzakis, F ^a,b   Cengher, D ^a,b   Bellet Amalric, E ^c   Jalabert, D ^c   Pelekanos, N T ^a,b  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b UNIVERSITY OF CRETE   (Greece)

^c CEA GRENOBLE   (France)

Author keywords

A3. Molecular beam epitaxy; A3. Quantum wells; B1. Nitrides; B1. Semiconducting quaternary alloys; B3. Heterojunction semiconductor devices

Indexed keywords

HETEROJUNCTIONS; LUMINESCENCE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL PUMPING; REACTIVE ION ETCHING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING QUATERNARY ALLOYS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037382748     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02275-3     Document Type: Conference Paper

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